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相关论文: Local Distortion Induced Metal-to-Insulator Phase …

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Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition…

强关联电子 · 物理学 2015-05-20 Tai-Lung Wu , Luisa Whittaker , Sarbajit Banerjee , G. Sambandamurthy

We measure the normal-state in-plane resistivity of La-doped Bi-2201 single crystals at low temperatures by suppressing superconductivity with 60-T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic…

超导电性 · 物理学 2009-10-31 S. Ono , Yoichi Ando , T. Murayama , F. F. Balakirev , J. B. Betts , G. S. Boebinger

Optical conductivity spectra of cubic pyrochlore $Y_{2-x} Bi_x Ru_2 O_7$ (0.0$\leq ${\it x}$\leq $2.0) compounds are investigated. As a metal-insulator transition (MIT) occurs around {\it x}$=$0.8, large spectral changes are observed. With…

强关联电子 · 物理学 2009-11-11 J. S. Lee , S. J. Moon , T. W. Noh , T. Takeda , R. Kanno , S. Yoshii , M. Sato

A new pyrochlore ruthenium oxide, Hg2Ru2O7 was synthesized under a high pressure of 6 GPa. In contrast to the extensively studied Ru4+ oxides, this compound possesses a novel Ru5+ valence state, corresponding to a half-filled t_2g_3…

The effect of Pr-doping on structural, magnetic and transport properties in electron-doped manganites La0.9-xPrxTe0.1MnO3 with fixed carrier concentration are investigated. The room temperature structural transition from rhombohedral (R3C)…

强关联电子 · 物理学 2009-11-10 J. Yang , W. H. Song , Y. Q. Ma , R. L. Zhang , B. C. Zhao , Z. G. Sheng , G. H. Zheng , J. M. Dai , Y. P. Sun

The phase diagram of Ca$_{2-x}$Sr$_x$RuO$_4$ has been studied by neutron diffraction on powder and single-crystalline samples. The experiments reveal antiferromagnetic order and structural distortions characterized by tilts and rotations of…

超导电性 · 物理学 2009-10-31 O. Friedt , M. Braden , G. Andre , P. Adelmann , S. Nakatsuji , Y. Maeno

First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain…

We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…

强关联电子 · 物理学 2024-07-17 Binoy Krishna De , V. G. Sathe , S. B. Roy

The effect of 16O-18O isotope exchange on the electric resistivity was studied for (La(1-y)Pr(y))0.7Ca0.3MnO3 ceramic samples. Depending on y, this mixed perovskite exhibited different types of low-temperature behavior ranging from…

We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain…

Ca2RuO4 is a structurally-driven Mott insulator with a metal-insulator transition at TMI = 357K, followed by a well-separated antiferromagnetic order at TN = 110 K. Slightly substituting Ru with a 3d transition metal ion M effectively…

强关联电子 · 物理学 2015-05-30 T. F. Qi , O. B. Korneta , S. Parkin , Jiangping Hu , G. Cao

Temperature dependence of the X-ray absorption near-edge structure (XANES) spectra at the Pr $L_{3}$- and Tb $L_{3}$-edges was measured for the (Pr$_{1-y}$Tb$_{y})_{0.7}$Ca$_{0.3}$CoO$_{3}$ system, in which a metal-insulator (MI) and…

材料科学 · 物理学 2013-05-01 H. Fujishiro , T. Naito , D. Takeda , N. Yoshida , T. Watanabe , K. Nitta , J. Hejtmanek , K. Knizek , Z. Jirak

Through in situ photoemission spectroscopy (PES), we investigated the changes in the electronic structure of Cr-doped VO2 films coherently grown on TiO2 (001) substrates. The electronic phase diagram of CrxV1-xO2 is drawn by a combination…

强关联电子 · 物理学 2023-07-14 D. Shiga , X. Cheng , T. T. Kim , T. Kanda , N. Hasegawa , M. Kitamura , K. Yoshimatsu , H. Kumigashira

We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046…

材料科学 · 物理学 2009-01-06 P. R. Stone , K. Alberi , S. K. Z. Tardif , J. W. Beeman , K. M. Yu , W. Walukiewicz , O. D. Dubon

Temperature (12K $\le$ T $\le$ 300K) dependent extended X-ray absorption fine structure (EXAFS) studies at the Fe K edge in FeSe$_{1-x}$Te$_x$ (x = 0, 0.5 and 1.0) compounds have been carried out to understand the reasons for increase in…

超导电性 · 物理学 2015-06-23 Kapil E. Ingle , K. R. Priolkar , Rayees A. Zargar , V. P. S. Awana , S. Emura

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

The low-carrier ordered phase below the metal-non-metal transition temperature T_MI ~ 63 K of PrRu4P12 is explored by probing magnetoresistance, magnetic susceptibility, thermoelectric power, and Hall effect on high quality single crystals.…

强关联电子 · 物理学 2009-08-06 S. R. Saha , H. Sugawara , T. Namiki , Y. Aoki , H. Sato

The origin of the metal-to-insulator transition in RNiO3 perovskites with trivalent 4f ion has challenged the condensed matter research community for almost three decades. A drawback for progress in this direction has been the lack of…

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In…

强关联电子 · 物理学 2009-09-11 C. Vaju , L. Cario , B. Corraze , E. Janod , V. Dubost , T. Cren , D. Roditchev , D. Braithwaite , O. Chauvet

A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…