相关论文: Observing the spin-Coulomb drag in spin-valve devi…

In a magnetic multilayer, magnetizations can be manipulated by spin transfer torque. Both spin transfer torque and its reciprocal effect, spin pumping, are governed by spin mixing conductance. The magnitude of spin mixing conductance at the…

In systems with strong spin-orbit coupling, the relationship between spin-transfer torque and the divergence of the spin current is generalized to a relation between spin transfer torques, total angular momentum current, and mechanical…

Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in…

The Coulomb drag effect arises due to electron-electron interactions, when two metallic conductors are placed in close vicinity to each other. It manifests itself as a charge current or voltage drop induced in one of the conductors, if the…

Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing…

The spin-valve complex magnetoimpedance of symmetric ferromagnet/normal metal/ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance---the real part difference of the…

Separate spin evolution quantum hydrodynamics is generalized to include the Coulomb exchange interaction. The Coulomb exchange interaction is considered as the interaction between the spin-down electrons being in the quantum states occupied…

We obtain a microscopic description of the interaction between electron spins in bulk semiconductors and in pairs of semiconductor quantum dots. Treating the k.p band mixing and the Coulomb interaction on the same footing, we obtain in the…

The author suggests an approach based on the separation of total energy of multielectron systems into the semi-classical Coulomb part and the non-classical additional part. This approach allows on the one hand to simplify calculations and…

We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…

We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit…

The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the…

We consider the Coulomb drag between two layers of two-dimensional electronic gases subject to a strong magnetic field. We first focus on the case in which the electronic density is such that the Landau level filling fraction $\nu$ in each…

The advancement of fabrication and lithography techniques of semiconductors have made it possible to study bi-layer systems made of two electronic layers separated by distances of several hundred Angstroms. In this situation the electrons…

Coulomb drag resulting from interlayer electron-electron scattering in double layer 2D electron systems at high magnetic field has been measured. Within the lowest Landau level the observed drag resistance exceeds its zero magnetic value by…

Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck…

We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device…

Spin-valve structures are usually associated with the ability to modify the resistance of electrical currents. We here demonstrate a profoundly different effect of a spin-valve. In combination with a topological insulator and…

We consider "shuttling" of spin-polarized electrons between two magnetic electrodes (half-metals) by a movable dot with a single electronic level. If the magnetization of the electrodes is antiparallel we show that the transmittance of the…

We investigate Coulomb drag in a system of two capacitively coupled superconducting nanowires. In this context, drag refers to the appearance of a stationary voltage in the passive wire in response to a current bias applied to the active…