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相关论文: Modifications and Extensions to Harrison's Tight-B…

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Moir\'e superlattices have emerged as a versatile platform for exploring a wide range of ex- otic quantum phenomena. Unlike angstrom-scale materials, the moir\'e length-scale system contains a large number of atoms, and its electronic…

材料科学 · 物理学 2025-11-10 Xueheng Kuang , Federico Escudero , Pierre A. Pantaleón , Francisco Guinea , Zhen Zhan

We present optimized tight-binding models with atomic orbitals to improve \textit{ab initio} tight-binding models constructed by truncating full density functional theory (DFT) Hamiltonian based on localized orbitals. Retaining qualitative…

介观与纳米尺度物理 · 物理学 2024-02-20 Sejoong Kim

We present a high-accuracy procedure for electronic structure calculations of strongly correlated materials. To address limitations in current electronic structure methods, we employ density functional theory in combination with the…

A recent tight-binding scheme provides a method for extending the results of first principles calculations to regimes involving $10^2 - 10^3$ atoms in a unit cell. The method uses an analytic set of two-center, non-orthogonal tight-binding…

mtrl-th · 物理学 2008-02-03 Michael J. Mehl , Dimitrios A. Papaconstantopoulos

Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model…

材料科学 · 物理学 2016-11-15 J. A. Silva-Guillén , P. San-Jose , R. Roldán

We extend a tight-binding total energy method to include f-electrons, and apply it to the study of the structural and elastic properties of a range of elements from Be to U. We find that the tight-binding parameters are as accurate and…

材料科学 · 物理学 2009-11-07 Matthew D. Jones , R. C. Albers

High-temperature superconductivity occurs in strongly correlated materials such as copper oxides and iron-based superconductors. Numerous experimental and theoretical works have been done to identify the key parameters that induce…

超导电性 · 物理学 2023-05-02 Kota Ido , Yuichi Motoyama , Kazuyoshi Yoshimi , Takahiro Misawa

A strong-coupling expansion is applied to the anharmonic Holstein model and to the Holstein-Hubbard model through fourth order in the hopping matrix element. Mean-field theory is then employed to determine transition temperatures of the…

凝聚态物理 · 物理学 2009-10-28 J. K. Freericks , G. D. Mahan

Most elemental metals under ambient conditions adopt simple structures such as BCC, FCC and HCP in specific groupings across the Periodic Table, and on compression, many of these elements undergo transitions to surprisingly complex…

材料科学 · 物理学 2022-06-27 Yuanhui Sun , Lei Zhao , Chris J. Pickard , Russell J. Hemley , Yonghao Zheng , Maosheng Miao

Method of invariants is used to obtain effective kp-Hamiltonian with position-dependent band parameters and correct boundary conditions for electron and hole envelope functions in A3B5-heterostructures with arbitrary interface orientation.…

材料科学 · 物理学 2007-05-23 G. F. Glinskii , K. O. Kravchenko

We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H$_3$S in the {\em Im}$\bar{3}${\em m} structure, stable in the range of pressure $P = 180-220$ GPa. We show that the interatomic…

强关联电子 · 物理学 2016-08-23 Luciano Ortenzi , Emmanuele Cappelluti , Luciano Pietronero

A non-perturbative relativistic tight-binding (TB) approximation method applicable to crystalline material immersed in a magnetic field was developed in 2015. To apply this method to any material in the magnetic field, the electronic…

材料科学 · 物理学 2023-11-27 Rohin Sharma , Amit Shrestha , Masahiko Higuchi , Katsuhiko Higuchi , Dipendra B. Hamal

We report combined first-principle and tight-binding (TB) calculations to simulate the effects of chemical edge modifications on structural and electronic properties. The C-C bond lengths and bond angles near the GNR edge have considerable…

材料科学 · 物理学 2007-05-23 Z. F. Wang , Qunxiang Li. Huaixiu Zheng , Hao Ren , Haibin Su , Q. W. Shi , Jie Chen

We derive electronic tight-binding Hamiltonians for strained graphene, hexagonal boron nitride and transition metal dichalcogenides based on Wannier transformation of {\it ab initio} density functional theory calculations. Our microscopic…

介观与纳米尺度物理 · 物理学 2018-08-14 Shiang Fang , Stephen Carr , Miguel A. Cazalilla , Efthimios Kaxiras

In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can…

材料科学 · 物理学 2013-09-02 E. Cappelluti , R. Roldán , J. A. Silva-Guillén , P. Ordejón , F. Guinea

We demonstrate that a tight-binding Hamiltonian with nearest- and next-nearest-neighbor hopping integrals can be decomposed into bulk and boundary parts in a general lattice system. The Hamiltonian decomposition reveals that next…

介观与纳米尺度物理 · 物理学 2009-04-16 Ken-ichi Sasaki , Yuji Shimomura , Yositake Takane , Katsunori Wakabayashi

Using the atomistic tight-binding method in combination with symmetry analysis and extended effective mass theory we derive a phenomenological model for the fine structure of the ground electron and hole states in $[111]$-grown PbX, X=S,Se…

介观与纳米尺度物理 · 物理学 2024-12-02 I. D. Avdeev , M. O. Nestoklon

We present a scheme to controllably improve the accuracy of tight-binding Hamiltonian matrices derived by projecting the solutions of plane-wave ab initio calculations on atomic orbital basis sets. By systematically increasing the…

We present a model of the electronic properties of monolayer transition-metal dichalcogenides based on a tight binding approach which includes the effects of strain and curvature of the crystal lattice. Mechanical deformations of the…

介观与纳米尺度物理 · 物理学 2016-10-14 Alexander J. Pearce , Eros Mariani , Guido Burkard

Twisted graphene bilayers show a complex electronic structure, further modified by interaction effects. The main features can be obtained from effective models, which make use a few phenomenological parameters. We analyze the influence of…

强关联电子 · 物理学 2019-03-04 Niels R. Walet , Francisco Guinea