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相关论文: Pressure induced suppression of the singlet insula…

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Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…

强关联电子 · 物理学 2007-12-21 N. Barišić , A. Akrap , H. Berger , L. Forró

The metal-insulator transition (MIT) of BaVS3 is suppressed under pressure and above the critical pressure of p~2GPa the metallic phase is stabilized. We present the results of detailed magnetoresistivity measurements carried out at…

强关联电子 · 物理学 2007-05-23 P. Fazekas , N. Barisic , I. Kezsmarki , L. Demko , H. Berger , L. Forro , G. Mihaly

The phase diagram of BaVS3 is studied under pressure using resistivity measurements. The temperature of the metal to nonmagnetic Mott insulator transition decreases under pressure, and vanishes at the quantum critical point p_cr=20kbar. We…

强关联电子 · 物理学 2009-10-31 L. Forro , R. Gaal , H. Berger , P. Fazekas , K. Penc , I. Kezsmarki , G. Mihaly

We carried out magnetotransport experiments under hydrostatic pressure in order to study the nature of the metal-insulator transition in BaVS$_3$. Scaling relations for $\rho(T,H,p)$ are established and the pressure dependence of the spin…

强关联电子 · 物理学 2014-01-15 I. Kezsmarki , Sz. Csonka , H. Berger , L. Forro , P. Fazekas , G. Mihaly

We performed point-contact spectroscopy tunneling measurements on single crystal BaPb$_{1-x}$Bi$_x$O$_3$ for $x=0$, $0.19$, $0.25$, and $0.28$ at temperatures ranging from $T=2-40$ K and find a suppression in the density of states at low…

超导电性 · 物理学 2015-06-17 Katherine Luna , Paula Giraldo-Gallo , Theodore Geballe , Ian Fisher , Malcolm Beasley

The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa)…

强关联电子 · 物理学 2009-11-11 R. Lengsdorf , A. Barla , J. A. Alonso , M. J. Martinez-Lope , H. Micklitz , M. M. Abd-Elmeguid

It is inferred from bulk-sensitive muon Knight shift measurement for a Bi$_{1.76}$Pb$_{0.35}$Sr$_{1.89}$CuO$_{6+\delta}$ single-layer cuprate that metal-insulator (MI) transition (in the low temperature limit, $T\rightarrow0$) occurs at the…

强关联电子 · 物理学 2016-09-13 M. Miyazaki , R. Kadono , M. Hiraishi , A. Koda , K. M. Kojima , Y. Fukunaga , Y. Tanabe , T. Adachi , Y. Koike

The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD)…

A metal-insulator transition (MIT) in BiFeO$_3$ under pressure was investigated by a method combining Generalized Gradient Corrected Local Density Approximation with Dynamical Mean-Field Theory (GGA+DMFT). Our paramagnetic calculations are…

强关联电子 · 物理学 2018-11-01 A. O. Shorikov , A. V. Lukoyanov , V. I. Anisimov , S. Y. Savrasov

We have extended the range of the high-pressure optical spectroscopy to the far-infrared region keeping the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase…

强关联电子 · 物理学 2014-01-15 I. Kezsmarki , R. Gaal , C. C. Homes , B. Sipos , H. Berger , S. Bordacs , G. Mihaly , L. Forro

Pressure-induced insulator-to-metal transition (IMT) has been studied in the van der Waals compound iron thiophosphate (FePS3) using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid…

材料科学 · 物理学 2020-04-27 R. A. Evarestov , A. Kuzmin

Measurements of temperature-dependent resistance and magnetization under hydrostatic pressures up to 2.13 GPa are reported for single-crystalline, superconducting BaBi$_3$. A temperature - pressure phase diagram is determined and the…

We report a room-temperature optical reflectivity study performed on [112]-oriented Cd$_3$As$_2$ single crystals over a broad energy range under external pressure up to 10 GPa. The abrupt drop of the band dispersion parameter…

材料科学 · 物理学 2018-05-23 E. Uykur , R. Sankar , D. Schmitz , C. A. Kuntscher

We investigated the pressure-dependent optical response of the low-dimensional Mott-Hubbard insulator TiOBr by transmittance and reflectance measurements in the infrared and visible frequency range. A suppression of the transmittance above…

We study the high-pressure metallic phase of high-purity single crystals of BaVS$_3$ by measuring the temperature, pressure, and magnetic field dependence of the resistivity. Above the critical pressure of $p_{\rm cr}=1.97$GPa an extended…

强关联电子 · 物理学 2007-05-23 N. Barišić , I. Kézsmárki , P. Fazekas , G. Mihály , H. Berger , L. Demkó , L. Forró

The pressure dependence of phase transitions in the quasi one-dimensional vanadium oxide $\beta$-Na$_{1/3}$V$_2$O$_5$ has been studied by magnetic susceptibility and electrical resistivity measurements. The pressure dependence of the…

强关联电子 · 物理学 2009-11-07 G. Obermeier , D. Ciesla , S. Klimm , S. Horn

The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$…

强关联电子 · 物理学 2014-01-15 I. Kezsmarki , G. Mihaly , R. Gaal , N. Barisic , A. Akrap , H. Berger , L. Forro , C. C. Homes , L. Mihaly

Infrared optical investigations of $\alpha$-(BEDT-TTF)$_2$I$_3$ have been performed in the spectral range from 80 to 8000~cm$^{-1}$ down to temperatures as low as 10~K by applying hydrostatic pressure. In the metallic state, $T > 135$~K, we…

强关联电子 · 物理学 2016-05-10 R. Beyer , A. Dengl , T. Peterseim , S. Wackerow , T. Ivek , A. V. Pronin , D. Schweitzer , M. Dressel

Temperature-driven metal-insulator and pressure-driven insulator-metal transitions observed in(BEDT-TTF)8[Hg4X12(C6H5Y)2]] with X = Y = Br are studied through band structure calculations based on X-ray crystal structure determination and…

The charge response in the barium vanadium sulfide (BaVS3) single crystals is characterized by dc resistivity and low frequency dielectric spectroscopy. A broad relaxation mode in MHz range with huge dielectric constant ~= 10^6 emerges at…

强关联电子 · 物理学 2009-11-13 T. Ivek , T. Vuletic , S. Tomic , A. Akrap , H. Berger , L. Forro
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