相关论文: Spin-orbit torques in bulk collinear antiferromagn…

One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. \v{Z}elezn\'y et al., PRL 113, 157201…

Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic…

Finding efficient ways of manipulating magnetic bits is one of the core goals in spintronic research. Electrically-generated spin-orbit torques (SOTs) are good candidates for this and the search for materials capable of generating…

The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field…

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…

Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…

Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…

Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…

Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…

Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with minimum heat dissipation. In novel materials such as Mn$_2$Au and CuMnAs, electric rather than magnetic fields may control antiferromagnetic order…

Efficient manipulation of the N\'eel vector in antiferromagnets can be induced by generation of spin orbit (SOT) or spin-transfer (STT) torques. Here we predict another possibility for antiferromagnetic domain switching by using a non-zero…

Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…

Spin-orbit torques (SOTs) have emerged as an efficient means to electrically control the magnetization in ferromagnetic heterostructures. Lately, an increasing attention has been devoted to SOTs in heavy metal (HM)/magnetic insulator (MI)…

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation open new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free…

Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…

We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed…

Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…

Motivated by recent experiments observing spin-orbit torque (SOT) acting on the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of a three-dimensional topological insulator (TI), we investigate the origin of the SOT…

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…