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Two-dimensional sliding ferroelectrics, with their enhanced efficiencies of charge separation and tunability, constitute promising platforms for next-generation photovoltaic devices. However, recent systems predominantly exhibit dual…

Sliding ferroelectricity is emerging as a distinct and promising mechanism for realizing ferroelectricity in low-dimensional systems, offering new design principles beyond the conventional ferroelectric mechanism. Further, the coexistence…

材料科学 · 物理学 2025-12-23 Akshay Mahajan , Awadhesh Narayan

Stacking nonpolar, monolayer materials has emerged as an effective strategy to harvest ferroelectricity in two-dimensional (2D) van de Waals (vdW) materials. At a particular stacking sequence, interlayer charge transfer allows for the…

材料科学 · 物理学 2024-11-12 Lingyuan Gao , Laurent Bellaiche

The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further…

材料科学 · 物理学 2022-12-28 Chunmei Zhang , Ping Guo , Jian Zhou

Two-dimensional ferroelectrics with robust polarization offer promising opportunities for non-volatile memory, field-effect transistors, and optoelectronic devices. However, the impact of lattice deformation on polarization and photoinduced…

材料科学 · 物理学 2025-06-02 Kun Yang , Jianxin Yu , Jia Zhang , Sheng Meng , Jin Zhang

Two-dimensional sliding ferroelectrics, with their unique stacking degrees of freedom, offer a different approach to manipulate polarization by interlayer sliding. Bending sliding ferroelectrics inevitably leads to interlayer sliding…

材料科学 · 物理学 2024-08-02 Ri He , Hua Wang , Fenglin Deng , Yuxiang Gao , Binwen Zhang , Yubai Shi , Run-Wei Li , Zhicheng Zhong

Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…

材料科学 · 物理学 2024-08-01 Qingrong Liang , Guozhong Zheng , Liu Yang , Shoujun Zheng

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…

Most non-ferroelectric two-dimensional materials can be endowed with so-called sliding ferroelectricity via non-equivalent homo-bilayer stacking, which is not applicable to mono-element systems like pure graphene bilayer with inversion…

介观与纳米尺度物理 · 物理学 2023-08-31 Liu Yang , Shiping Ding , Jinhua Gao , Menghao Wu

Sliding ferroelectrics built from stacked nonpolar monolayers enable out-of-plane polarization and unconventional switching via interlayer sliding, yet the microscopic sliding dynamics remain unclear. Using machine-learning molecular…

材料科学 · 物理学 2026-04-23 Jia-Wen Li , Sheng Meng , Xinghua Shi , Jin Zhang , Wei-Hai Fang

Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a…

介观与纳米尺度物理 · 物理学 2023-11-22 Dongyang Yang , Jing Liang , Jingda Wu , Yunhuan Xiao , Jerry I. Dadap , Kenji Watanabe , Takashi Taniguchi , Ziliang Ye

Two-dimensional (2D) materials viz. transition metal dichalcogenides (TMD) and transition metal oxides (TMO) offer a platform that allows creation of heterostructures with a variety of properties. The optoelectronic industry has observed an…

材料科学 · 物理学 2021-06-07 Arunima Singh , Manjari Jain , Saswata Bhattacharya

Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…

Spontaneous polarization and bulk photovoltaic effect (BPVE) are two concomitant physical properties in ferroelectric materials. The flipping of ferroelectric order usually accompanies with the switching of BPVE as both of them are reversed…

材料科学 · 物理学 2022-07-04 Rui-Chun Xiao , Yang Gao , Hua Jiang , Wei Gan , Changjin Zhang , Hui Li

Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor…

材料科学 · 物理学 2025-03-03 Xinyu Tian , Zixuan Zhang , Lixiu Guan , Xiaobiao Liu , Xiaoyu Zhao , Linyang Li

Two-dimensional materials with ferroelectric properties break the size effect of conventional ferroelectric materials and unlock unprecedented potentials of ferroelectric-related application at small length scales. In this work, using…

材料科学 · 物理学 2022-03-25 Bo Xu , Junkai Deng , Xiangdong Ding , Jun Sun , Jefferson Zhe Liu

Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower…

The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential…

材料科学 · 物理学 2020-01-08 San-Dong Guo , Xiao-Shu Guo

The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition metal…

材料科学 · 物理学 2021-01-28 Aaron M. Schankler , Lingyuan Gao , Andrew M. Rappe

We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and…

介观与纳米尺度物理 · 物理学 2012-11-19 A. K. M. Newaz , D. Prasai , J. I. Ziegler , D. Caudel , S. Robinson , R. F. Haglund , K. I. Bolotin
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