相关论文: Anisotropic-Strain Control of The Magnetic Structu…
Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of…
Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide $\mathrm{Fe_{1/3}NbS_2}$ have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering…
General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They…
Layered ferromagnets with high coercivity have special applications in nanoscale memory elements in electronic circuits, such as data storage. Therefore, searching for new hard ferromagnets and effectively tuning or enhancing the coercivity…
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M,…
We report the electronic structure and magnetic ordering of the single molecule magnet [Mn$_{10}$O$_{4}$(2,2'-biphenoxide)$_{4}$Br$_{12}$]$^{4-}$ based on first-principles all-electron density-functional calculations. We find that two of…
We investigate the magnetization reversal in Fe/MgO(001) films with fourfold in-plane magnetic anisotropy and an additional uniaxial anisotropy whose orientation and strength are tuned using different growth geometries and post growth…
Antiferromagnetic antiperovskites, where magnetically active 3$d$ metal cations are placed in the octahedral corners of a perovskite structure, are in the spotlight due to their intertwined magnetic structure and topological properties.…
Multiple recent studies have identified the metallic antiferromagnet Mn$_2$Au to be a candidate for spintronic applications due to apparent in-plane anisotropy, preserved magnetic properties above room temperature, and current-induced…
Recent advances in two-dimensional materials have greatly expanded the family of ferromagnetic materials. The well-known 2D ferromagnets, such as CrI$_3$, Cr$_2$Ge$_2$Te$_6$, and Fe$_3$GeTe$_2$ monolayers, are characterized by…
We use spherical neutron polarimetry to determine the ground state magnetic structure of Mn3Sn. We find that Mn3Sn adopts an inverse triangular structure with spins parallel to <100> (Type III) rather than spins parallel to <110> (Type IV).…
Strain-mediated magnetoelectric (ME) heterostructures enable electric-field control of magnetism and are promising for ultra-low-power spintronic logic. Yet achieving spatially selective, low-voltage control in thin films and quantifying ME…
Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to…
Mn$_3$GaC undergoes a ferromagnetic to antiferromagnetic, volume discontinuous cubic-cubic phase transition as a function of temperature, pressure and magnetic field. Through a series of temperature dependent x-ray absorption fine structure…
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a…
Electric-field control of magnetization promises to substantially enhance the energy efficiency of device applications ranging from data storage to solid-state cooling. However, the intrinsic linear magnetoelectric effect is typically small…
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
The influence of uniaxial anisotropy and the dipole interaction on the direction of the magnetization of ultra-thin ferromagnetic films in the ground-state is studied. The ground-state energy can be expressed in terms of anisotropy…
The interplay between magnetic order and electronic topology in van der Waals materials enables extreme responses to external stimuli. The nodal-line semiconductor Mn3Si2Te6 exemplifies this, exhibiting colossal angular magnetoresistance…