相关论文: Reinforcement-Learning-Designed Field-Free Sub-Nan…
We investigate the magnetization reversal of single-domain magnetic nanoparticle driven by linear down-chirp microwave magnetic field pulse. Numerical simulations based on the Landau-Lifshitz-Gilbert equation reveal that solely down-chirp…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
It is demonstrated by means of the optimal control theory that the energy cost of the spin-orbit torque induced reversal of a nanomagnet with perpendicular anisotropy can be strongly reduced by proper shaping of both in-plane components of…
Micromagnetics simulation based on the classical Landau-Lifshitz-Gilbert (LLG) equation has long been a powerful method for modeling magnetization dynamics and reversal of three-dimensional (3D) magnets. For two-dimensional (2D) magnets,…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the…
The magnetization reversal and dynamics of a spin valve pillar, whose lateral size is 64$\times$64 nm$^2$, are studied by using micromagnetic simulation in the presence of spin transfer torque. Spin torques display both characteristics of…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…
Spin-orbit torques (SOTs) generated in SOT-material/ferromagnet structures are classified as damping-like (DL) and field-like (FL) torques for current-driven magnetization switching. It is well known that both DL- and FL-SOTs originate from…
Detailed understanding of spin dynamics in magnetic nanomaterials is necessary for developing ultrafast, low-energy and high-density spintronic logic and memory. Here, we develop micromagnetic models and analytical solutions to elucidate…
Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete…
Numerical integration of the Landau-Lifshitz-Gilbert equation with thermal fluctuations is used to study the dynamic response of single-domain nanomagnets to rapid changes in the applied magnetic field. The simulation can resolve…
Control of magnetic order in antiferromagnets is a central challenge in the development of next-generation spintronic devices. Here, we propose and analyze magnetization switching driven by the field-derivative torque, a torque that…
High-fidelity control of one- and two-qubit gates past the error correction threshold is an essential ingredient for scalable quantum computing. We present a reinforcement learning (RL) approach to find entangling protocols for…
Non-volatile Neuromorphic Computing (NC) elements utilizing Spin Orbit Torque (SOT) provide a viable solution to alleviate the memory wall bottleneck in contemporary computing systems. However, the two challenges, low SOT efficiency and the…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
The torque generated by the transfer of spin angular momentum from a spin-polarized current to a nanoscale ferromagnet can switch the orientation of the nanomagnet much more efficiently than a current-generated magnetic field, and is…