相关论文: Emerging ultra-wide band gap semiconductors for fu…
We propose a novel concurrent ranging technique for distance estimation with ultra-wideband (UWB) radios. Conventional schemes assume that the necessary packet exchanges occur in isolation, to avoid collisions. Concurrent ranging relies on…
Semiconductor materials play an important role as transducers of electrical energy in betavoltaic batteries. Optimal selection of effective factors will increase the efficiency of these batteries. In this study, based on common…
For materials which are incorrectly predicted by density functional theory to be metallic, an iterative procedure must be adopted in order to perform GW calculations. In this paper we test two iterative schemes based on the quasi-particle…
Increasing attention is given to the upper mid-band or Frequency Range 3 (FR3), from 7 to 24 GHz, in the research towards sixth-generation (6G) networks. Promises of offering large data rates at favorable propagation conditions are leading…
Antiperovskite derivatives have recently emerged as promising lead-free alternatives to halide perovskites for optoelectronic applications. Here, using a comprehensive first-principles calculations including density functional perturbation…
Moving beyond traditional 2D materials is now desirable to have switching capabilities (e.g., transistors). Here we propose using borophene because, as we will show in this letter, obtaining regions of the electronic bandstructure which act…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
Waveguide quantum electrodynamics offers a wide range of possibilities to effectively engineer interactions between artificial atoms via a one-dimensional open waveguide. While these interactions have been experimentally studied in the few…
Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…
In recent decades organic electronics has entered the mainstream of consumer electronics, driven by innovations in scalability and low power applications, and low-cost fabrication methods. The potential for using organic semiconductor…
The embedding of tunable quantum emitters in a photonic bandgap structure enables the control of dissipative and dispersive interactions between emitters and their photonic bath. Operation in the transmission band, outside the gap, allows…
This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…
New technologies are necessary for the unprecedented expansion of connectivity and communications in the modern technological society. The specific needs of wireless communication systems in 5G and beyond, as well as devices for the future…
Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive…
We present a comprehensive closed-form GN/EGN model supporting ultra-wide-band systems spanning 50 THz of optical bandwidth. We show a case-study of 10x100km of SMF where we gradually increase the number of channels across the C,L,S,U,E…
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon…
Plasmonics is a research area merging the fields of optics and nanoelectronics by confining light with relatively large free-space wavelength to the nanometer scale - thereby enabling a family of novel devices. Current plasmonic devices at…
Diamond and cBN are two of the most promising ultra-wide-band-gap (UWBG) semiconductors for applications in high-power high-frequency electronic devices. Yet despite extensive studies on carrier transport in these materials, there are large…