相关论文: Two-Terminal Electrical Detection of the N\'eel Ve…
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order…
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspire us to exploit 2D antiferromagnetic spintronics. However, the detection of the N\'eel vector in 2D antiferromagnets remains…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
The ultrathin structure and efficient spin dynamics of two-dimensional (2D) antiferromagnetic (AFM) materials hold unprecedented opportunities for ultrafast memory devices, artificial intelligence circuits, and novel computing technology.…
Electric control of N\'eel vector is a central task of antiferromagnetic (AFM) spintronics. The major scheme so far relies on the linear N\'eel torque, which however is restricted to AFMs with broken inversion symmetry. Here, we propose a…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the N\'eel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered…
Whether a zero-moment antiferromagnet can host an intrinsic half-metallic ground state with a single-spin Fermi surface remains an open question in antiferromagnetic spintronics. Existing proposals in compensated magnets reach only…
Antiferromagnetic (AFM) spintronics has been receiving tremendous attention due to their ultrafast kinetics, zero stray field, immune to external magnetic field, and potential to minimizing magnetic storage devices. The optical control of…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Detecting the orientation of the N\'eel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to…
N\'eel vector, the order parameter of collinear antiferromagnets, serves as a state variable in associated antiferromagnetic (AFM) spintronic devices to encode information. A deterministic switching of N\'eel vector is crucial for the…
Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the…
Antiferromagnetic (AFM) spintronics exploits the N\'eel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidamping spin-orbit torques (SOT) can be used to switch the N\'eel vector…
Altermagnets (AMs) - magnetic materials that have spin-split bandstructure with zero net spin polarization can be classified as weak or strong depending upon the strength of altermagnetic term in the Hamiltonian. We theoretically…
The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…
Antiferromagnets exhibit distinctive characteristics such as ultrafast dynamics and robustness against perturbative fields, thereby attracting considerable interest in fundamental physics and technological applications. Recently, it was…