相关论文: Dynamical control of random telegraph noise in mag…

We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…

The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…

Telegraph noise caused by frequent switching of the magnetization in small magnetic devices has become a useful resource for probabilistic computing. Conventional theories have been based on a linearization of the fluctuations at the…

Superparamagnetic magnetic tunnel junctions (sMTJs) are promising components for true random number generation and probabilistic computing. Achieving high-frequency fluctuation while maintaining reliable control over output level is…

Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static…

Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert…

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…

Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to…

Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the…

Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…

Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we study…

We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…

The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…

Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…

We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…

Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…