相关论文: Quantifying Flat-Band Voltage in Si Metal-Oxide-Se…

Single-shot terahertz (THz) spectroscopy probes sub-picosecond, non-repetitive events by combining the advantages of laser absorption techniques with the phase-sensitive detection of interferometric methods. However, its usage as a…

We present an experimental instrument that performs laboratory-based gas-phase Terahertz Desorption Emission Spectroscopy (THz-DES) experiments in support of astrochemistry. The measurement system combines a terahertz heterodyne radiometer…

We report the coherent generation and detection of terahertz (THz) pulses covering the bandwidth of 0.1-9 THz in a high repetition rate, low pulse energy laser system. In this work we demonstrate the application and evaluation of…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

We report electro-optic sampling (EOS) response and terahertz (THz) optical rectification (OR) in z-cut alpha-quartz. Due to its small effective second-order nonlinearity, echo-free waveform of intense THz pulses with a few MV/cm…

We demonstrate detection of broadband intense terahertz electromagnetic pulses by Zeeman-torque sampling (ZTS). Our approach is based on magneto-optic probing of the Zeeman torque the terahertz magnetic field exerts on the magnetization of…

Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…

To address the increasing demand for ultra-high-capacity wireless communication, terahertz (THz) frequencies near 300 GHz are attracting attention as a new spectral frontier. This work presents the first experimental demonstration of…

Spintronic terahertz emitters (STEs) generate broadband terahertz (THz) radiation, which is essential for spectroscopy, imaging, and communication. The performances and the essential physical parameters of STE devices are linked to the…

With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…

Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot…

The Transition-Edge Sensor (TES) is an extremely sensitive device which is used to measure the energy of individual X-ray photons. For astronomical spectrometry applications, SRON develops a Frequency Domain Multiplexing (FDM) read-out…

Time-resolved X-ray Emission/Absorption Spectroscopy (Tr-XES/XAS) is an informative experimental tool sensitive to electronic dynamics in materials, widely exploited in diverse research fields. Typically, Tr-XES/XAS requires X-ray pulses…

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two…

This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged…

Terahertz (THz) Time domain spectroscopy (THz-TDS) is a broadband spectroscopic technique spreading its uses in multiple fields: in science from material science to biology, in industry where it measures the thickness of a paint layer…

We report fabrication and characteristics of an organic monolayer based Metal Oxide Semiconductor (MOS) device. In place of SiO2 oxide layer in the MOS configuration, we used 1H, 1H, 2H, 2H- perfluorooctyl trichlorosilane (FOTS)…

High-power, continuously tunable narrowband terahertz (THz) sources are essential for advancing nonlinear optics, THz-driven material dynamics, and ultrafast spectroscopy. Conventional techniques typically impose a trade-off between pulse…

Terahertz (THz) time-domain emission spectroscopy was performed on layered 2H-MoSe2 and 2H-WSe2. The THz emission shows an initial cycle attributed to surge currents and is followed by oscillations attributed to coherent interlayer phonon…