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Wurtzite ferroelectrics are rapidly emerging as a promising material class for next-generation non-volatile memory technologies, owing to their large remanent polarization, intrinsically ordered three-dimensional crystal structure, and full…
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm)…
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm)…
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques.…
Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good…
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scaling. Further reduction in thickness is essential for…
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the case of…
Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N…
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC…
Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a…
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 and doped-HfO2 material systems, as well as their fast…
Wurtzite ferroelectrics (e.g., $\mathrm{Al_{0.93}B_{0.07}N}$) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and…
Ferroelectricity enables key integrated technologies from non-volatile memory to precision ultrasound. Wurtzite ferroelectric Al1-xScxN has recently attracted attention because of its robust ferroelectricity and Si process compatibility in…
This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates.…
This paper reports the fatigue and retention behavior for Al1-xBxN thin films, a member of the novel family of wurtzite ferroelectrics, with an emphasis on the role of capacitor architecture. By modifying the capacitor architecture, and…
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics…
Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray…
While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field ($E_c$) for polarization switching. Unraveling the atomistic…