相关论文: Manipulating magnetization by orbital current from…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit…
Charge-spin conversion phenomena such as the spin Hall effect allow for the excitation of magnons in a magnetic layer by passing an electric current in an adjacent nonmagnetic conductor. We demonstrate that this current-induced modification…
Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the…
In this work, employing spin-pumping techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…
We have performed precise Hall measurements for the ferrotoroidic candidate material UNi4B. Below Neel temperature TN ~ 20 K (corresponding to the ferrotoroidic transition temperature), a Hall voltage becomes finite even at zero field and…
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by the spin--orbit coupling. Here, we propose an alternative mechanism to realize the intrinsic…
We report on the possibility of manipulating magnetic materials by using itinerant orbital angular momentum to produce out-of-plane spin polarization in van der Waals heterostructures. Employing a real-space formulation of the OAM operator…
Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…
The intricate interplay between light and matter provides effective tools for manipulating topological phenomena. Here, we theoretically propose and computationally show that circularly polarized light hold the potential to transform the…
Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a…
When a ferromagnet is deposited on the surface of a topological insulator the topologically protected surface state develops a gap and becomes a 2-dimensional quantum Hall liquid. We demonstrate that the Hall current in such a liquid,…
The ability of spin-orbit interactions to convert charge current into spin current, most often in the bulk of heavy metal thin films, has been the hallmark of spintronics in the last decade. In this study, we demonstrate how the insertion…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
Spin current--a flow of electron spins without a charge current--is an ideal information carrier free from Joule heating for electronic devices. The celebrated spin Hall effect, which arises from the relativistic spin-orbit coupling,…