相关论文: Metal-organic Pulsed Laser Deposition for Complex …
The dynamics of the charge ordered (CO) state under non-equilibrium conditions created by strong dc-electric field (~106 V/cm) and photo-illumination with short (~ 6 ns) laser pulses is investigated in Bi1-xCaxMnO3 (x > 0.5) epitaxial…
Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate…
Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored.…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into…
Designing a thin film structure often begins with choosing a film deposition method that employs a specific primary process by which chemical species are formed and transported. In other words, a film deposition system in which two…
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using…
We propose a novel variant of the Localized Orthogonal Decomposition (LOD) method for time-harmonic scattering problems of Helmholtz type with high wavenumber $\kappa$. On a coarse mesh of width $H$, the proposed method identifies local…
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remains…
High–quality epitaxial YNixMn1-xO3 thin films have been successfully grown on SrTiO3 (100) (STO) by pulsed laser deposition. X-ray diffraction studies showed that the films deposited on STO are fully c-axis oriented and exhibit…
The complex interplay between several active degrees of freedom (charge, lattice, orbtial and spin order) is thought to determine the electronic properties of many oxides, but the respective role of the various contributions is often…
Control over crystallographic orientation in metal-organic framework (MOF) thin films is crucial for exploiting their anisotropic properties in sensing, catalysis, and separation. Achieving reproducible, highly oriented films remains…
We propose and demonstrate a method for the construction of highly uniform, multilayered, orientation-controlled superstructures of CdSe/CdZnS core/shell colloidal nanoplatelets (NPLs) using bi-phase liquid interface. These atomically-flat…
Vanadium dioxide, a well-known Mott insulator, is a highly studied electronic material with promising applications in information processing and storage. While fully crystalline layers exhibit exceptional properties, such as a sharp and…
Laser-directed-energy deposition (DED) offers advantages in additive manufacturing (AM) for creating intricate geometries and material grading. Yet, challenges like material inconsistency and part variability remain, mainly due to its…
This work reports a pulsed laser-assisted synthesis, detailed structural characterization, and study of plasmonic properties of three sets of TiN/TiNO thin films with high electron density. The first two sets of TiN films were grown at 600C…
Most materials recently developed for room temperature phosphorescence (RTP) lack of practical relevance due to their inconvenient crystalline morphology. Using amorphous material systems instead, programmable luminescent tags (PLTs) based…
We report the impact of capping layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of resistivity during heat treatment in ambient environment. In the present study, various…
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the…
Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity…