相关论文: Antiferromagnetic diamond network as an efficient …
The occurrence of a finite mismatch between the up and down spin energy channels due to the application of an electric field, leading to the generation of a polarized spin current from an unpolarized beam in antiferromagnetic materials, has…
Spin-splitting antiferromagnets with spin-polarized band structures in momentum space have garnered intensive research attention due to their zero net magnetic moments, ultras fast spin dynamics as conventional antiferromagnets, and…
We design spin filters for particles with potentially arbitrary spin S (= 1/2, 1, 3/2,....) using a one-dimensional periodic chain of magnetic atoms as a quantum device. Describing the system within a tight-binding formalism we present an…
Non-equilibrium spin-polarized transport properties of antiferromagnetic stanene nanoribbons are theoretically studied under the combining effect of a normal electric field and linearly polarized irradiation based on the tight-binding model…
We show that a quasiperiodic magnetic chain comprising magnetic atomic sites sequenced in Fibonacci pattern can act as a prospective candidate for spin filters for particles with arbitrary spin states. This can be achieved by tuning a…
In this work we review the recent advances on superconducting phenomena in junctions formed by superconductors and unconventional magnets. Conventional magnets, such as ferromagnets and antiferromagnets, are characterized by broken…
We describe the features of magnonic crystals based upon antiferromagnetic elements. Our main results are that with a periodic modulation of either magnetic fields or system characteristics, such as the anisotropy, it is possible to tailor…
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical…
Spatial, momentum and energy separation of electronic spins in condensed matter systems guides the development of novel devices where spin-polarized current is generated and manipulated. Recent attention on a set of previously overlooked…
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state,…
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…
It was previously believed that the Bloch electronic states of non-magnetic materials with inversion symmetry cannot have finite spin polarizations. However, since the seminal work by Zhang et al. [Nat. Phys. 10, 387-393 (2014)] on local…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We theoretically study the scattering of spin waves from a sharp domain wall in an antiferromagnetic spin chain. While the continuum model for an antiferromagnetic material yields the well-known result that spin waves can pass through a…
The discovery of altermagnetism offers new opportunities for exploring novel quantum states and developing spintronic devices for enabling momentum dependent spin splitting in compensated systems, while zero net magnetization limit its…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…
Incorporating zero-net-magnetization magnets that exhibit spin-splitting into spintronics delivers key advantages: faster switching dynamics, greater immunity to destabilizing fields, lower power consumption, and markedly improved overall…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer…
We study the spin-dependent transport of spin-1/2 electrons through an interferometer made of two elongated quantum dots or quantum nanowires, which are subject to both an Aharonov-Bohm flux and (Rashba and Dresselhaus) spin-orbit…