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Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…

介观与纳米尺度物理 · 物理学 2025-11-20 Abel Thayil , Lasse Ermoneit , Markus Kantner

We propose an all-electrical setup to generate valley polarization in graphene. A finite graphene sheet is connected to two normal metal electrodes each with two terminals along its zigzag edges, while the armchair edges remain free. When a…

介观与纳米尺度物理 · 物理学 2025-06-30 Sachchidanand Das , Abhiram Soori

We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity-induced spin-orbit coupling $\lambda_{v}$, sublattice potential $\Delta$, and an off-resonant circularly…

介观与纳米尺度物理 · 物理学 2023-07-07 M. Zubair , P. Vasilopoulos , M. Tahir

Valley magnetic moments play a crucial role in valleytronics in 2D hexagonal materials. Traditionally, based on studies of quantum states in homogeneous bulks, it is widely believed that only materials with broken structural inversion…

介观与纳米尺度物理 · 物理学 2023-09-04 Zheng-Han Huang , Feng-Wu Chen , Yu-Shu G. Wu

Excitations of impurity complexes in semiconductors can not only provide a route to fill the terahertz gap in optical technologies, but can also connect local quantum bits to scale up solid-state quantum-computing devices. However, taking…

介观与纳米尺度物理 · 物理学 2021-08-04 Wei Wu , A. J. Fisher

Controlling the momentum of carriers in semiconductors, known as valley polarization, is a new resource for optoelectronics and information technologies. Materials exhibiting high polarization are needed for valley-based devices. Few-layer…

介观与纳米尺度物理 · 物理学 2022-12-14 Rasmus H. Godiksen , Shaojun Wang , T. V. Raziman , Jaime Gómez Rivas , Alberto G. Curto

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and…

光学 · 物理学 2016-11-23 Ebrahim Forati , Tyler J. Dill , Andrea Tao , Dan Sievenpiper

We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…

介观与纳米尺度物理 · 物理学 2017-08-23 Branislav K. Nikolic , Satofumi Souma

The valley in the band structure of materials has gained a lot of attention recently. The promising applications of the valley degree of freedom include the next-generation valleytronic devices, quantum information processing, quantum…

The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…

介观与纳米尺度物理 · 物理学 2020-04-24 Kuan Eng Johnson Goh , Fabio Bussolotti , Chit Siong Lau , Dharmraj Kotekar-Patil , Zi En Ooi , Jingyee Chee

Transport of charge and valley degrees of freedom coupled to order-parameter dynamics in magnetic Weyl semimetals is studied in the framework of nonequilibrium thermodynamics. In addition to the established valley-related transport…

介观与纳米尺度物理 · 物理学 2021-02-10 Yaroslav Tserkovnyak

Monolayer transition metal dichalcogenides have attracted great attentions for potential applications in valleytronics. However, the valley polarization degree is usually not high because of the intervalley scattering. Here, we demonstrate…

材料科学 · 物理学 2023-02-23 Jianchen Dang , Mingwei Yang , Xin Xie , Zhen Yang , Danjie Dai , Zhanchun Zuo , Can Wang , Kuijuan Jin , Xiulai Xu

We show that an $n-n^{-}-n$ junction in 2D semiconductors can flexibly realize two basic valleytronic functions, i.e. valley filter and valley source, with gate controlled switchability between the two. Upon carrier flux passing through the…

介观与纳米尺度物理 · 物理学 2017-06-16 Matisse Wei-Yuan Tu , Wang Yao

Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…

强关联电子 · 物理学 2021-01-04 Ludmila Szulakowska , Moritz Cygorek , Maciej Bieniek , Pawel Hawrylak

The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which…

介观与纳米尺度物理 · 物理学 2013-12-02 Yang Liu , Juntao Song , Yuxian Li , Ying Liu , Qing-feng Sun

Spintronics is a rapidly evolving technology that utilizes the spin of electrons along with their charge to enable high speed, low power and non volatile electronic devices. The development of novel materials with tailored magnetic and…

材料科学 · 物理学 2025-04-25 Ravinder Kumar , Sachin Gupta

Modern light generation technology offers extraordinary capabilities for sculpting light pulses, with full control over individual electric field oscillations within each laser cycle. These capabilities are at the core of lightwave…

光学 · 物理学 2020-11-25 Á. Jiménez-Galán , R. E. F. Silva , O. Smirnova , M. Ivanov

Hybrid superconductor-semiconductor heterostructures are promising platforms for realizing topological superconductors and exploring Majorana bound states physics. Motivated by recent experimental progress, we theoretically study how…

介观与纳米尺度物理 · 物理学 2021-03-15 A. Maiani , R. Seoane Souto , M. Leijnse , K. Flensberg

The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured…

介观与纳米尺度物理 · 物理学 2014-05-16 A. G. Moghaddam , T. Kernreiter , M. Governale , U. Zuelicke

In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled…

介观与纳米尺度物理 · 物理学 2019-06-12 Xian-Peng Zhang , Chunli Huang , Miguel A. Cazalilla