相关论文: Observation of Orbital Hall Effect in Si
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
State-of-the-art developments in magnetic devices rely on manufacturing faster, more efficient memory elements. A significant development in this direction has been the discovery of orbital torques, which employ the orbital angular momentum…
The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit…
The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE)…
Increasing demand for computational power has initiated the hunt for energy efficient and stable memory devices. This is the overarching motivation behind the recent rise of \textit{orbitronics}, which looks to harness the orbital angular…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
We report a comprehensive experimental investigation of orbital-to-charge conversion in metallic and semiconductor materials, emphasizing the fundamental roles of the inverse orbital Hall effect (IOHE) and the inverse orbital Rashba effect.…
We investigate orbital current induced effects arising from the orbital Hall effect in light-metal/ferromagnet bilayers. Thin films of Ti in ohmic contact with Ni were studied using second-harmonic longitudinal and transverse voltage…
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…
The orbital Hall effect (OHE), resulting from non-trivial quantum geometry of 2D materials, has several potential advantages over the spin Hall effect (SHE), the latter being well known for its many applications in spintronics. Like the…
We demonstrate the formation of orbital and spin Hall effects (OHE/SHE) in the 1T phase of non-magnetic transition metal dichalcogenides. With the aid of density functional theory calculations and model Hamiltonian studies on MX$_2$ (M =…
The orbital Hall effect (OHE) has attracted significant attention for developing energy-efficient electronic devices. However, utilizing it in fast, low-power devices requires an enhanced understanding of underlying extrinsic and intrinsic…
The field of orbitronics has emerged with great potential to impact information technology by enabling environmentally friendly electronic devices. The main electronic degree of freedom at play is the orbital angular momentum, which can…
Comparing with the spin of electron, the electronic orbitals, which have been long ignored in non-equilibrium transport, are getting more and more attentions, due to the prediction and experimental verification of orbital Hall effect (OHE)…
In magnetic systems, angular momentum is carried by spin and orbital degrees of freedom. Nonlocal devices, comprising heavy-metal nanowires on magnetic insulators like yttrium iron garnet (YIG), enable angular momentum transport via…
The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized…
Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…
The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital…
The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy…
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE)…