相关论文: On-Chip Optical Switching with Epsilon-Near-Zero M…
Epsilon-near-zero materials are exceptional candidates for studying electrodynamics and nonlinear optical processes at the nanoscale. We demonstrate that by alternating a metal and a highly doped conducting-oxide, the epsilon-near-zero…
Active photonic integrated circuits (PICs) in the visible spectrum are essential for on-chip applications, requiring low-loss waveguides with broad transparency and efficient, low-power phase modulation. Here, we demonstrate a compact,…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
Metamaterials offer unprecedented flexibility for manipulating the optical properties of matter, including the ability to access negative index, ultra-high index and chiral optical properties. Recently, metamaterials with near-zero…
We demonstrate an optomechanical phase shifter. By electrostatically deflecting the nanofabricated mechanical structure, the effective index of a nearby waveguide is changed and the resulting phase shift is measured using an integrated…
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability,…
Plasmonic nanoantennas offer new avenues to manipulate the propagation of light in materials due to their near field enhancement and ultrafast response time. Here we investigate the epsilon-near-zero (ENZ) response in an L-shaped…
All-optical switching based on optical nonlinearity must undergo complex processes of light-mater interaction in atom and electron scale, so a relative high power and long response time is required, that construct main bottlenecks in…
Novel materials, with enhanced light-matter interaction capabilities, play an essential role in achieving the lofty goals of nonlinear optics. Recently, Epsilon-Near-Zero (ENZ) media have emerged as a promising candidate to enable the…
All-optical active plasmonic devices are of fundamental importance for designing efficient nanophotonic circuits. We theoretically propose and numerically investigate an active plasmonic device made up of a nonlinear epsilon-near-zero…
We are demonstrating the optical control of a specific state of the germanium telluride (GeTe) phase change material and its integration as control element for realizing extremely efficient optically reconfigurable THz devices. The…
Here we demonstrate an on-chip electro-optic frequency shifter that is precisely controlled using only a single-tone microwave signal. This is accomplished by engineering the density of states of, and coupling between, optical modes in…
Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT)…
We report on the optical and physical characterization of metallic nanowire (NW) metamaterials fabricated by electrodeposition of ~30 nm diameter gold nanowires in nano-porous anodic aluminum oxide. We observe a uniaxial anisotropic…
In recent years, epsilon-near-zero (ENZ) materials have attracted much attention due to their unique properties that can be tuned under electrical and optical signals. Furthermore, they allow for a strong enhancement of a nonlinearity close…
Optical switches are one of the most important elements of integrated photonics. Here, we designed, fabricated and characterized several nanophotonic optical switches (NOSs) in silicon that exhibit ultra-compact footprint, along with…
We investigate second harmonic generation, low-threshold multistability, all-optical switching, and inherently nonlocal effects due to the free-electron gas pressure in an epsilon-near-zero (ENZ) metamaterial slab made of cylindrical,…
We present an electro-optic modulator exploiting an array of Vanadium dioxide nanorods operating in the epsilon near regime as the active switching material integrated in a silicon waveguide. The modulator takes advantage of the…
The concept of the broadband epsilon-near-zero meta-atom consisting of layered stacks with specified metallic filling ratio and thickness is proposed based on the Bergman spectral representation of the effective permittivity. The step-like…
Near-infrared epsilon-near-zero (ENZ) metamaterial slabs based on silver-germanium (Ag-Ge) multilayers are experimentally demonstrated. Transmission, reflection and absorption spectra are characterized and used to determine the complex…