相关论文: Sub-100 Hz Intrinsic Linewidth 852 nm Silicon Nitr…
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide…
Superradiant lasers operate in the bad-cavity regime, where the phase coherence is stored in the spin state of an atomic medium rather than in the intracavity electric field. Such lasers use collective effects to sustain lasing and could…
We demonstrated a continuously tunable laser system by butt coupling a reflective semiconductor optical amplifier (RSOA) chip with a thin-film lithium niobate (TFLN) based multi-channel interference (MCI) cavity chip. This hybrid integrated…
We report on the spectral properties of a diode laser with a tunable external cavity in integrated optics. Even though the external cavity is short compared to other small-bandwidth external cavity lasers, the spectral bandwidth of this…
Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical…
We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of…
We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a…
The design of a 671 nm diode laser with a mode-hop-free tuning range of 40 GHz is described. This long tuning range is achieved by simultaneously ramping the external cavity length with the laser injection current. The external cavity…
A modified Coherent 899-21 titanium sapphire laser is injection locked to produce 6-6.5 W of single-frequency light at 852 nm. After closed-loop amplitude control and frequency stabilization to a high-finesse cavity, it delivers 4-4.5 W…
We report the design and performance of a Littrow-type 671 nm External Cavity Diode Laser (ECDL) that delivers output power greater than 150 mW and features enhanced passive stability. The main body of the ECDL is constructed using titanium…
A standard method to reduce the linewidth of semiconductor lasers involves the use of external optical feedback (EOF). However, feedback powers less than 1 % usually trigger coherence collapse (CC), leading to chaotic laser dynamics and…
We present a narrow linewidth continuous laser source with over 11 Watts of output power at 780nm, based on single-pass frequency doubling of an amplified 1560nm fibre laser with 36% efficiency. This source offers a combination of high…
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an…
Precision applications including quantum computing and sensing, mmWave/RF generation, and metrology, demand widely tunable, ultra-low phase noise lasers. Today, these experiments employ table-scale systems with bulk-optics and isolators to…
Quantum cascade lasers (QCLs) are semiconductor-heterostructure devices known for their emission in the mid-infrared and THz spectral regions. Due to their operating regime, their intrinsic linewidth is significantly narrower compared to…
A guided-wave chip laser operating in a single longitudinal mode at 2860 nm is presented. The cavity was set in the Littman-Metcalf configuration to achieve single-frequency operation with a side-mode suppression ratio above 33 dB. The chip…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
Narrow linewidth laser(NLL) of high frequency stability and small form factor is essential to enable applications in long range sensing, quantum information and atomic clocks. Various high performance NLL have been demonstrated by…
An extended cavity diode laser operating in the Littrow configuration emitting near 657 nm is stabilized via its injection current to a reference cavity with a finesse of more than 10^5 and a corresponding resonance linewidth of 14 kHz. The…