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We study how the electronic structure of the bilayer graphene (BLG) is changed by electric field and strain from {\it ab initio} density-functional calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal stacked…

材料科学 · 物理学 2010-03-10 B. R. K. Nanda , S. Satpathy

The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are…

Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible…

We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the…

介观与纳米尺度物理 · 物理学 2017-04-26 Ahmed Missaoui , Jouda Jemaa Khabthani , Nejm-Eddine Jaidane , Didier Mayou , Guy Trambly de Laissardière

Stacking geometry in multilayer graphene (MLG) provides an interesting degree of freedom to engineer its electronic structure near the Fermi level, wherein the linear bands in single layer graphene could retain or evolve into parabolic or…

介观与纳米尺度物理 · 物理学 2026-05-28 Fred Sun , Jia-An Yan

We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene -- both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density…

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different…

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

介观与纳米尺度物理 · 物理学 2012-02-21 Chun Hung Lui , Zhiqiang Li , Kin Fai Mak , Emmanuele Cappelluti , Tony F. Heinz

We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures…

介观与纳米尺度物理 · 物理学 2019-11-20 Young Woo Choi , Hyoung Joon Choi

We study the superlattice minibands produced by the interplay between moir\'e pattern induced by hexagonal BN substrate on graphene layer and the interlayer coupling in bilayer graphene with Bernal stacking (BLG). We compare moir\'e…

介观与纳米尺度物理 · 物理学 2013-11-20 M. Mucha-Kruczynski , J. Wallbank , V. I. Fal'ko

Bilayer graphene (BLG) with a tunable bandgap appears interesting as an alternative to graphene for practical applications, thus its transport properties are being actively pursued. Using density functional theory and perturbation analysis,…

材料科学 · 物理学 2015-05-11 Changwon Park , Junga Ryou , Suklyun Hong , Bobby Sumpter , Gunn Kim , Mina Yoon

The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small…

Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based…

介观与纳米尺度物理 · 物理学 2022-09-27 Xuechao Zhai , Yaroslav M. Blanter

Two monolayers of graphene twisted by a small `magic' angle exhibit nearly flat bands leading to correlated electronic states and superconductivity, whose precise nature including possible broken symmetries, remain under debate. Here we…

强关联电子 · 物理学 2019-12-13 Jong Yeon Lee , Eslam Khalaf , Shang Liu , Xiaomeng Liu , Zeyu Hao , Philip Kim , Ashvin Vishwanath

Recent experiments indicate that the Bernal stacked graphene multilayer (BGM) have an interaction induced gapped (or pseudo gapped) ground state. Here, we propose that, due to the electron correlation, the BGM can be induced into a half…

介观与纳米尺度物理 · 物理学 2022-02-02 Miao Liang , Shuai Li , Jin-Hua Gao

Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable…

强关联电子 · 物理学 2016-10-20 Youngwoo Nam , Dong-Keun Ki , Mikito Koshino , Edward McCann , Alberto F. Morpurgo

We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…

介观与纳米尺度物理 · 物理学 2019-11-05 F. J. Culchac , Rodrigo B. Capaz , Leonor Chico , E. Suarez Morell

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

We report on the energy spectrum of electrons in twisted bilayer graphene (tBLG) obtained by the band-unfolding method in the tight-binding model. We find the band-gap opening at particular points in the reciprocal space, that elucidates…

材料科学 · 物理学 2017-03-08 Hirofumi Nishi , Yu-ichiro Matsushita , Atsushi Oshiyama

In this paper, we analytically investigate the electronic structure of Bernal stacking (AB stacking) graphene evolving from monolayer (a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy) to multi-layer…

介观与纳米尺度物理 · 物理学 2007-05-23 Z. F. Wang , Huaixiu Zheng , Q. W. Shi , Jie Chen , Jinlong Yang , J. G. Hou
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