相关论文: Hyper-doping of Silicon for Plasmonics in the Tele…
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $\mu$m by adjusting the free…
The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films…
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' performances and for the exploration of exotic phases such as…
We demonstrate heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with…
Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by…
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in…
We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered…
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…
Silicon dominates electronics, optoelectronics, photovoltaics and photonics thanks to its suitable properties, abundance, and well-developed cost-effective manufacturing processes. Recently, crystalline silicon has been demonstrated to be…
The combination of established nanofabrication with attractive material properties makes silicon a promising material for quantum technologies, where implanted dopants serve as qubits with high density and excellent coherence even at…
Heavily-doped semiconductor nanocrystals characterized by a tunable plasmonic band have been gaining increasing attention recently. Herein, we introduce this type of materials focusing on their structural and photo physical properties.…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
The development of plasmonics and related applications in the terahertz range faces limitations due to the intrinsic high electron density of standard metals. All-dielectric systems are profitable alternatives, which allows for customized…