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相关论文: Phonon Assisted Exciton Processes in Two-Dimension…

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Phonon assisted photoluminescence provides a direct window into exciton phonon interactions in low dimensional semiconductors. Using fully ab initio many body perturbation theory, including finite momentum Bethe Salpeter calculations, we…

强关联电子 · 物理学 2026-03-31 Afreen Anamul Haque , Rishabh Saraswat , Aniket Singha , Rekha Verma , Sitangshu Bhattacharya

The photoluminescence (PL) spectrum of transition metal dichalcogenides (TMDs) shows a multitude of emission peaks below the bright exciton line and not all of them have been explained yet. Here, we study the emission traces of…

We report an experimental study of temperature-dependent spectral lineshapes of phonon side-band emission stemming from dark excitons in monolayer and bilayer WSe$_{2}$. Using photoluminescence spectroscopy in the range from 4 to 100K, we…

Heterostructures of layered transition metal dichalcogenides (TMDs) host long-lived, tunable excitons, making them intriguing candidates for material-based quantum information applications. Light absorption in these systems induces a…

材料科学 · 物理学 2023-08-25 Tomer Amit , Sivan Refaely-Abramson

Monolayer transition metal dichalcogenides (TMDCs) are direct gap semiconductors with unique potential for ultrathin light emitters. Yet, their photoluminescence (PL) is not completely understood. We compute the radiative recombination rate…

材料科学 · 物理学 2018-07-20 Hsiao-Yi Chen , Maurizia Palummo , Davide Sangalli , Marco Bernardi

We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The…

We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its…

Low-temperature photoluminescence (PL) of hBN-encapsulated monolayer tungsten diselenide (WSe$_2$) shows a multitude of sharp emission peaks below the bright exciton. Some of them have been recently identified as phonon sidebands of…

Cubic boron nitride (cBN) is a wide-bandgap polymorph of boron nitride whose optical response remains only partially understood due to the coexistence of indirect electronic transitions and strong exciton-phonon coupling. Using…

Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission…

Many recent experiments investigated potential and attractive means of modifying many-body interactions in two-dimensional materials through time-resolved spectroscopy techniques. However, the role of ultrafast phonon-assisted processes in…

材料科学 · 物理学 2020-01-28 Dino Novko , Marko Kralj

Phonon-assisted photoluminescence (PL) in molybdenum-based two-dimensional dichalcogenides is typically weak due to the dormant phonon coupling with optically inactive momentum-dark (intervalley) excitons, unlike in tungsten-based…

材料科学 · 物理学 2025-04-01 Rishabh Saraswat , Rekha Verma , Sitangshu Bhattacharya

Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN)…

材料科学 · 物理学 2023-02-28 Pierre Lechifflart , Fulvio Paleari , Davide Sangalli , Claudio Attaccalite

We present a comprehensive optical study of thin films of tungsten disulfide (WS$_2$) with layer thicknesses ranging from mono- to octalayer and in the bulk limit. It is shown that the optical band-gap absorption of monolayer WS$_2$ is…

介观与纳米尺度物理 · 物理学 2017-09-19 Maciej R. Molas , Karol Nogajewski , Artur O. Slobodeniuk , Johannes Binder , Miroslav Bartos , Marek Potemski

Monoclinic bismuth vanadate (m-BiVO$_4$) is a promising indirect band gap semiconductor for photoelectrochemical water splitting, yet the characteristics of its low-lying photoexcitations, or excitons, remain poorly understood. Here, we use…

Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…

介观与纳米尺度物理 · 物理学 2024-09-04 Pushpendra Yadav , Amit Agarwal , Sitangshu Bhattacharya

The broadening and polarization of excitonic luminescence in monolayer TMDs largely suffer from inhomogeneity and temperature - an unresolved problem to date. In this work, through few-layer-graphene encapsulation of monolayer WS$_2$, we…

介观与纳米尺度物理 · 物理学 2023-09-04 Garima Gupta , Kausik Majumdar

Two-dimensional (2D) heterostructures (HS) formed by transition-metal dichalcogenide (TMDC) monolayers offer a unique platform for the study of intralayer and interlayer excitons as well as moir\'e-pattern-induced features. Particularly,…

Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions.…

We experimentally demonstrate time-resolved exciton propagation in a monolayer semiconductor at cryogenic temperatures. Monitoring phonon-assisted recombination of dark states, we find a highly unusual case of exciton diffusion. While at 5…

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