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Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…

介观与纳米尺度物理 · 物理学 2018-12-19 Manuel Offidani , Aires Ferreira

We apply a circularly and linearly polarized terahertz field on a monolayer of graphene taking into account spin-orbit interactions of the intrinsic and Rashba type. It turns out that the field can not only be used to induce a gap in the…

介观与纳米尺度物理 · 物理学 2013-08-29 Andreas Scholz , Alexander López , John Schliemann

By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to…

介观与纳米尺度物理 · 物理学 2014-10-07 F. Volmer , M. Drögeler , E. Maynicke , N. von den Driesch , M. L. Boschen , G. Güntherodt , C. Stampfer , B. Beschoten

The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response…

The spin pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered Co2FeAl (CFA) /Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current…

介观与纳米尺度物理 · 物理学 2018-02-28 Sajid Husain , Ankit Kumar , Vineet Barwal , Nilamani Behera , Serkan Akansel , Sujeet Chaudhary , Peter Svedlindh

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin currents absorbed in the FM. We exploit the large spin absorption at the Ru interface to…

The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…

The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…

介观与纳米尺度物理 · 物理学 2009-10-23 Mark B. Lundeberg , Joshua A. Folk

We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that…

介观与纳米尺度物理 · 物理学 2018-04-12 Taro Wakamura , Francesco Reale , Pawel Palczynski , Sophie Guéron , Cecilia Mattevi , Hélène Bouchiat

Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a…

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…

介观与纳米尺度物理 · 物理学 2020-06-17 C. K. Safeer , Josep Ingla-Aynés , Nerea Ontoso , Franz Herling , Wenjing Yan , Luis E. Hueso , Fèlix Casanova

We theoretically study spin-transfer torque (STT) in a graphene system with spin-orbit coupling (SOC). We consider a graphene-based junction where the spin-orbit coupled region is sandwiched between two ferromagnetic (F) segments. The…

介观与纳米尺度物理 · 物理学 2021-04-20 Morteza Salehi , Razieh Beiranvand , Mohammad Alidoust

Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current…

材料科学 · 物理学 2016-09-02 L. Ma , H. A. Zhou , L. Wang , X. L. Fan , W. J. Fan , D. S. Xue , K. Xia , G. Y. Guo , S. M. Zhou

The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological…

介观与纳米尺度物理 · 物理学 2018-12-05 S. Jafarpisheh , A. W. Cummings , K. Watanabe , T. Taniguchi , B. Beschoten , C. Stampfer

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

材料科学 · 物理学 2018-08-01 Yi Wang , Rajagopalan Ramaswamy , Hyunsoo Yang

We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spectrum in the presence of weak magnetic fields. Our results…

介观与纳米尺度物理 · 物理学 2015-06-15 A. T. Costa , M. S. Ferreira , Toby Hallam , Georg S. Duesberg , A. H. Castro Neto

Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…

其他凝聚态物理 · 物理学 2015-05-30 M. R. Sears , W. M. Saslow

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown…

材料科学 · 物理学 2015-06-04 Jie Yu , Guanxiong Liu , Anirudha V. Sumant , Vivek Goyal , Alexander A. Balandin

There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on…

We report that Joule heating can be used to enhance the interfacial spin conductivity between a metal and an oxide. We observe that local annealing of the interface at about 550\,K by injecting large current densities…