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GaN/AlN interfaces are essential in advanced high-power and high-frequency electronic devices, where effective thermal management is crucial for optimal performance and reliability. This work investigates the thermal boundary conductance…

介观与纳米尺度物理 · 物理学 2025-05-16 Hao Zhou , Khalid Zobaid Adnan , Wyatt Allen Jones , Tianli Feng

Understanding the ideal limit of interfacial thermal conductance (ITC) across semiconductor heterointerfaces is crucial for optimizing heat dissipation in practical applications. By employing a highly accurate and efficient machine-learned…

材料科学 · 物理学 2025-04-28 Xiaonan Wang , Xin Wu , Penghua Ying , Zheyong Fan , Huarui Sun

We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon…

Thermal management at silicon-diamond interface is critical for advancing high-performance electronic and optoelectronic devices. In this study, we calculate the interfacial thermal conductance between silicon and diamond using machine…

Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simulations to evaluate both the specific heat of $MoS_{2}$ as…

介观与纳米尺度物理 · 物理学 2019-08-02 Saurabh V. Suryavanshi , Alexander J. Gabourie , Amir Barati Farimani , Eric Pop

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation,…

Thermal boundary conductance (TBC) at dissimilar interfaces imposes a fundamental limit on electronic device performance, yet predicting and understanding heat transport across realistic, disordered boundaries remains elusive. Here, we…

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a…

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is…

Aiming at developing high thermal conductivity copper/diamond composite, an unconventional approach applying self-assembled monolayer (SAM) prior to the high-temperature sintering of copper/diamond composite was utilized to enhance the…

Thermal boundary conductance (TBC) is critical in many thermal and energy applications. A decades-old puzzle has been that many of the measured TBCs, such as those well characterized across Al/Si and ZnO/GaN interfaces, significantly exceed…

介观与纳米尺度物理 · 物理学 2019-04-16 Jingjing Shi , Xiaolong Yang , Timothy S. Fisher , Xiulin Ruan

Overheating is a critical bottleneck limiting the performance and reliability of next-generation high-power and high-frequency electronics. Interfacial thermal resistance constitutes a significant portion of the total thermal resistance. In…

介观与纳米尺度物理 · 物理学 2026-02-17 Jinwen Liu , Zifeng Huang , Lina Yang , Yachao Zhang , Xingqiang Zhang , Kun Zhang , Xufei Guo , Yuxiang Wang , Hong Zhou , Jincheng Zhang , Wei Wang , Yue Hao , Zhe Cheng

Overheating has emerged as a primary challenge constraining the reliability and performance of next-generation high-performance electronics, such as chiplets and (ultra)wide bandgap electronics. Advanced heterogeneous integration not only…

We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states…

介观与纳米尺度物理 · 物理学 2016-03-02 Tingyu Lu , Jun Zhou , Tsuneyoshi Nakayama , Ronggui Yang , Baowen Li

The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational…

Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…

材料科学 · 物理学 2024-04-25 Bin Xu , Fengwen Mu , Yingzhou Liu , Rulei Guo , Shiqian Hu , Junichiro Shiomi

Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is…

Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal…

介观与纳米尺度物理 · 物理学 2021-01-12 Zhun-Yong Ong , Yongqing Cai , Gang Zhang , Yong-Wei Zhang

We theoretically investigate the thermal boundary conductance across metal-nonmetal interfaces in the presence of the electron-phonon coupling not only in metal but also at interface. The thermal energy can be transferred from metal to…

材料科学 · 物理学 2016-02-11 Mengjie Li , Yuanyuan Wang , Jun Zhou , Jie Ren , Baowen Li

High-entropy pyrochlore oxides possess ultra-low thermal conductivity and excellent high-temperature phase stability, making them promising candidate for next-generation thermal barrier coating (TBC) materials. However, reliable predictive…

材料科学 · 物理学 2025-07-24 Yuxuan Wang , Guoqiang Lan , Huicong Chen , Jun Song
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