相关论文: Ferroelectrovalley in Two-Dimensional Multiferroic…
Spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the…
The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained…
A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…
Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial…
2D ferrovalley materials that exhibit spontaneous valley polarization are both fundamentally intriguing and practically appealing to be used in valleytronic devices. Usually, the research on 2D ferrovalley materials is mainly focused on…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-functional electrical and…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
Recently, two-dimensional (2D) multiferroics have attracted numerous attention due to their fascinating properties and promising applications. Although the ferroelectric (FE)-ferroelastic and ferromagnetic (FM)-ferroelastic multiferroics…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
Two-dimensional (2D) multiferroic heterostructures present a promising platform for advanced spin devices by leveraging the coexisting ferromagnetic (FM) and ferroelectric (FE) orders. Through first-principles calculations and micromagnetic…
As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley…
The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means.…
It was recently observed that materials showing most striking multiferroic phenomena are frustrated spin-density-wave magnets. We present a simple phenomenological theory, which describes the orientation of the induced electric polarization…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
The combination of metallicity and ferroelectricity breaks traditional boundaries, paving new avenues for innovative electronic materials and devices. This breakthrough is particularly notable, as metallicity and ferroelectricity have…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization…