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Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it…

材料科学 · 物理学 2023-10-25 Cheng Fan , Kazuyuki Sakamoto , Peter Krüger

Defects in semiconductors can exhibit multiple charge states, which can be used for charge storage applications. Here we consider such charge storage in a series of oxygen deficient phases of TiO$_2$, known as Magn\'eli phases. These…

材料科学 · 物理学 2016-02-10 A. C. M. Padilha , H. Raebiger , A. R. Rocha , G. M. Dalpian

In the high temperature cuprate superconductors, the pervasiveness of anomalous electronic transport properties suggests that violation of conventional Fermi liquid behavior is closely tied to superconductivity. In other classes of…

强关联电子 · 物理学 2012-06-13 N. P. Butch , K. Jin , K. Kirshenbaum , R. L. Greene , J. Paglione

Novel imaging methods show that the mobile dopants in optimum doped La$_2$CuO$_{4+y}$ (LCO) get self-organized, instead of randomly distributed. Rigid-band models fail because of ordering of dopants and supercell calculations are required…

超导电性 · 物理学 2015-06-15 Thomas Jarlborg , Antonio Bianconi

We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant…

超导电性 · 物理学 2009-11-10 A. V. Pronin , A. Pimenov , A. Loidl , A. Tsukada , M. Naito

Oxygen vacancies are an important type of defect in transition metal oxides. In SrTiO$_3$ they are believed to be the main donors in an otherwise intrinsic crystal. At the same time, a relatively deep gap state associated with the vacancy…

强关联电子 · 物理学 2013-11-21 Chungwei Lin , Alexander A. Demkov

Aliovalent doping in an oxide material introduces modifications in the valence state of the host cation and often leads to tailoring the oxygen content in the lattice. Moreover, if the dopant cation is larger than the host cation, the…

材料科学 · 物理学 2025-03-24 Poonam Singh , P. Maneesha , Manju Kumari , Abdelkrim Mekki , Khalil Harrabi , Somaditya Sen

The Seebeck coefficient $S$ of the cuprate superconductor La$ _{2-x} $Sr$_{x} $CuO$ _{4}$ (LSCO) was measured in magnetic fields large enough to access the normal state at low temperatures, for a range of Sr concentrations from $x = 0.07$…

The {}^{17}O NMR spectra of Bi_2Sr_2CaCu_2O$_{8+\delta}$ (Bi-2212) single crystals were measured in the temperature range from 4 K to 200 K and magnetic fields from 3 to 29 T, reported here principally at 8 T. The NMR linewidth of the…

超导电性 · 物理学 2007-07-24 Bo Chen , Sutirtha Mukhopadhyay , W. P. Halperin , Prasenjit Guptasarma , D. G. Hinks

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

材料科学 · 物理学 2019-03-27 Qihang Liu , Gustavo M. Dalpian , Alex Zunger

In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally…

材料科学 · 物理学 2023-11-29 Harshan Reddy Gopidi , Lovelesh Vashist , Oleksandr I. Malyi

Two common difficulties in the design of topological quantum materials are that the desired features lie too far from the Fermi level and are spread over a too-large energy range. Doping-induced states at the Fermi level provide a solution,…

介观与纳米尺度物理 · 物理学 2025-01-31 Moritz M. Hirschmann , Johannes Mitscherling

In order to examine to what extent the rigid-band-like electron doping scenario is applicable to the transition metal-substituted Fe-based superconductors, we have performed angle-resolved photoemission spectroscopy studies of…

A scenario is presented, in which the presence of a quantum critical point due to formation of incommensurate charge density waves accounts for the basic features of the high temperature superconducting cuprates, both in the normal and in…

超导电性 · 物理学 2009-10-30 C. Castellani , C. Di Castro , M. Grilli

Extrinsic levels, formation energies, and relaxation geometries are calculated ab initio for oxygen vacancies in alpha-quartz SiO2. The vacancy is found to be thermodynamically stable in the charge states Q=+3, Q=0, Q=--2, and Q=-3. The…

材料科学 · 物理学 2009-10-28 C. M. Carbonaro , V. Fiorentini , S. Massidda

Superconductivity at about 15.6 K was achieved in Tb_{1-x}Ca_xFeAsO by partially substituting Tb^{3+} with Ca^{2+} in the nominal doping region x = 0.40 \sim 0.50. A detailed investigation was carried out in a typical sample with doping…

超导电性 · 物理学 2010-02-28 Gang Mu , Bin Zeng , Peng Cheng , Xiyu Zhu , Fei Han , Bing Shen , Hai-Hu Wen

It is shown that pinning of an electron Wigner crystal by a small concentration of charged impurities creates the finite density of charged localized states near the Fermi level. In the case of residual impurities in the spacer this density…

凝聚态物理 · 物理学 2009-11-10 B. I. Shklovskii

Demanding a consistent quantum field theory description of spin 1/2 particles near a circular Fermi surface in 2d leads to a unique fermionic theory with relevant quartic interactions which has an emergent Lorentz symmetry and automatically…

强关联电子 · 物理学 2009-09-29 Eliot Kapit , André LeClair

We present the first comprehensive derivation of the intrinsic electronic phase diagram of the iron-oxypnictide superconductors in the normal state based on the analysis of the electrical resistivity $\rho$ of both LaFeAsO$_{1-x}$F$_x$ and…

超导电性 · 物理学 2009-07-23 C. Hess , A. Kondrat , A. Narduzzo , J. E. Hamann-Borrero , R. Klingeler , J. Werner , G. Behr , B. Büchner

In cuprate superconductors, the doping of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the doping level $p$. In most materials, $p$…