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相关论文: Combining intrinsic and sliding-induced polarizati…

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When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding…

Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been…

材料科学 · 物理学 2025-02-19 Chao Chen , Deyang Chen , Peilian Li , Minghui Qin , Xubing Lu , Guofu Zhou , Xingsen Gao , Jun-Ming Liu

The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and…

材料科学 · 物理学 2026-03-12 Rui Peng , Guangxu Su , Yangyang Fan , Jiaan Li , Fanxin Liu , Yee Sin Ang

Most non-ferroelectric two-dimensional materials can be endowed with so-called sliding ferroelectricity via non-equivalent homo-bilayer stacking, which is not applicable to mono-element systems like pure graphene bilayer with inversion…

介观与纳米尺度物理 · 物理学 2023-08-31 Liu Yang , Shiping Ding , Jinhua Gao , Menghao Wu

Two-dimensional (2D) ferroelectrics, which is rare in nature, enable high-density non-volatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), in which, two stacked layers of the…

材料科学 · 物理学 2023-04-19 Junyi Ji , Changsong Xu , H. J. Xiang

Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications.…

介观与纳米尺度物理 · 物理学 2024-10-07 Jing Liang , Dongyang Yang , Jingda Wu , Yunhuan Xiao , Kenji Watanabe , Takashi Taniguchi , Jerry I. Dadap , Ziliang Ye

The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner…

材料科学 · 物理学 2023-12-22 Guoliang Yu , Shengxian Li , Anlian Pan , Mingxing Chen , Zhenyu Zhang

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

材料科学 · 物理学 2014-06-16 B. Kundys , V. Iurchuk , C. Meny , H. Majjad , B. Doudin

Although most two-dimensional (2D) materials are non-ferroelectric with highly symmetric lattices, symmetry breaking may take place in their bilayers upon certain stacking order, giving rise to so-called sliding ferroelectricity where the…

介观与纳米尺度物理 · 物理学 2023-04-10 Liu Yang , Menghao Wu

Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moir\'{e}…

介观与纳米尺度物理 · 物理学 2024-04-30 Renjun Du , Jingkuan Xiao , Di Zhang , Xiaofan Cai , Siqi Jiang , Fuzhuo Lian , Kenji Watanabe , Takashi Taniguchi , Lei Wang , Geliang Yu

Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…

材料科学 · 物理学 2024-08-01 Qingrong Liang , Guozhong Zheng , Liu Yang , Shoujun Zheng

Recent studies highlight the scientific importance and broad application prospects of two-dimensional (2D) sliding ferroelectrics, which prevalently exhibit vertical polarization with suitable stackings. It is crucial to understand the…

材料科学 · 物理学 2024-07-23 Shihan Deng , Hongyu Yu , Junyi Ji , Changsong Xu , Hongjun Xiang

Van der Waals "sliding" ferroelectric bilayers, whose electric polarization is locked to the interlayer alignment, show promise for future non-volatile memory and other nanoelectronic devices. These applications require a fuller…

统计力学 · 物理学 2025-09-19 Benjamin Remez , Moshe Goldstein

The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…

材料科学 · 物理学 2024-03-05 Wei Xun , Chao Wu , Hanbo Sun , Weixi Zhang , Yin-Zhong Wu , Ping Li

Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral…

Two-dimensional sliding ferroelectrics, with their unique stacking degrees of freedom, offer a different approach to manipulate polarization by interlayer sliding. Bending sliding ferroelectrics inevitably leads to interlayer sliding…

材料科学 · 物理学 2024-08-02 Ri He , Hua Wang , Fenglin Deng , Yuxiang Gao , Binwen Zhang , Yubai Shi , Run-Wei Li , Zhicheng Zhong

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…

材料科学 · 物理学 2021-02-16 Yan Liang , Ning Mao , Ying Dai , Liangzhi Kou , Baibiao Huang , Yandong Ma

Light-induced sliding ferroelectricity in two-dimensional van der Waals materials enables polarization control via relative layer motion. However, polarization switching occurs on the time scale of shear modes (tens of ps) and requires very…

材料科学 · 物理学 2026-05-26 Xiangzhou Zhu , Stefano Mocatti , Matteo Calandra

Sliding ferroelectricity is emerging as a distinct and promising mechanism for realizing ferroelectricity in low-dimensional systems, offering new design principles beyond the conventional ferroelectric mechanism. Further, the coexistence…

材料科学 · 物理学 2025-12-23 Akshay Mahajan , Awadhesh Narayan

Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…

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