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Traditional solid-state physics has long correlated the optical properties of materials with their electronic structures. However, recent discoveries of intrinsic gapped metals have challenged this classical view. Gapped metals possess…

材料科学 · 物理学 2023-04-28 Muhammad Rizwan Khan , Harshan Reddy Gopidi , Oleksandr I. Malyi

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin…

材料科学 · 物理学 2011-08-19 Xiao HU

This paper deals with a significant family of compounds predicted by simplistic electronic structure theory to be metals but are, in fact, insulators. This false metallic state has been traditionally attributed in the literature to reflect…

材料科学 · 物理学 2020-11-30 Oleksandr I. Malyi , Alex Zunger

Spin gapless semiconductors (SGSs) are a new class of zero gap materials which have a fully spin polarised electrons and holes. They bridge zero gap materials and half-metals. The band structures of the SGSs can have two types of energy…

材料科学 · 物理学 2020-06-16 Zengji Yue , Zhi Li , Lina Sang , Xiaolin Wang

The transition between gapped (semiconducting) and gapless (metallic) phases and tunability of bandgap in materials is a very lucrative yet considerably challenging goal for new-age device preparation. For bulk materials and for…

强关联电子 · 物理学 2022-02-08 Rudranil Basu , Swastibrata Bhattacharyya

It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy…

介观与纳米尺度物理 · 物理学 2017-02-14 Xiao-lin Wang

Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…

材料科学 · 物理学 2025-04-11 Ersoy Şaşıoğlu , Paul Bodewei , Nicki F. Hinsche , Ingrid Mertig

A simple interlayer pair tunneling is solved exactly. We find that in the normal state spin-1/2 particle and hole excitations are gapped. But the state is an unusual metal, characterized by novel fermionic spin zero and charge +2e and -2e…

凝聚态物理 · 物理学 2007-05-23 Sanjoy K. Sarker , Philip W. Anderson

Recently discovered high-quality nodal chain spin-gapless semimetals $M$F$_3$ ($M$ = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\%…

介观与纳米尺度物理 · 物理学 2022-08-25 Xiaodong Zhou , Run-Wu Zhang , Xiuxian Yang , Xiao-Ping Li , Wanxiang Feng , Yuriy Mokrousov , Yugui Yao

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a…

材料科学 · 物理学 2015-06-11 S. Skaftouros , K. Ozdogan , E. Sasioglu , I. Galanakis

In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally…

材料科学 · 物理学 2023-11-29 Harshan Reddy Gopidi , Lovelesh Vashist , Oleksandr I. Malyi

Spintronics, a transformative field of research, leverages the spin of electron to revolutionize electronic devices, offering significant advantages over traditional charge-based systems. This chapter highlights the critical role of novel…

材料科学 · 物理学 2025-02-03 A. Sud , A. Kumar , M. Cubukcu

Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…

介观与纳米尺度物理 · 物理学 2009-11-10 Shuichi Murakami , Naoto Nagaosa , Shou-Cheng Zhang

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…

材料科学 · 物理学 2016-06-22 Patrizio Graziosi

These informal lecture notes describe the progress in semiconductor spintronics in a historic perspective as well as in a comparison to achievements of spintronics of ferromagnetic metals. After outlining motivations behind spintronic…

材料科学 · 物理学 2008-01-03 Tomasz Dietl

Half-metals are a class of materials that are metallic only for one spin direction, and are essential for spintronics applications where one needs to read, write, store and transfer spin-data. This spin sensitivity appears to restrict them…

For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…

材料科学 · 物理学 2011-11-07 Z. Wilamowski , A. Werpachowska

Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and…

介观与纳米尺度物理 · 物理学 2014-01-13 Masaaki Tanaka , Shinobu Ohya , Pham Nam Hai

The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access…

We propose a unique way to control both bandgap and the magnetic properties of nanoscale graphene, which might prove highly beneficial for application in nanoelectronic and spintronic devices. We have shown that chemical doping by nitrogen…

材料科学 · 物理学 2015-05-13 Julia Berashevich , Tapash Chakraborty
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