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Quantum Hall (QH) states are arguably the most ubiquitous examples of nontrivial topological order, requiring no special symmetry and elegantly characterized by the first Chern number. Their higher dimension generalizations are particularly…

强关联电子 · 物理学 2018-10-03 Ching Hua Lee , Yuzhu Wang , Youjian Chen , Xiao Zhang

Quantum Hall effect in 1,2-layer graphene is analyzed. The transverse and longitudinal resistivity are found to be universal functions of the filling factor and temperature. At fixed magnetic field mode the magneto-transport problem is…

介观与纳米尺度物理 · 物理学 2024-06-07 M. V. Cheremisin

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and…

介观与纳米尺度物理 · 物理学 2011-06-08 T. J. B. M. Janssen , A. Tzalenchuk , R. Yakimova , S. Kubatkin , S. Lara-Avila , S. Kopylov , V. Fal'ko

Low-energy transport measurements in Quantum Hall systems have been argued to be governed by emergent modular symmetries whose predictions are robust against many of the detailed microscopic dynamics. We propose the recently-observed…

介观与纳米尺度物理 · 物理学 2008-11-26 C. P. Burgess , B. P. Dolan

Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from…

介观与纳米尺度物理 · 物理学 2019-04-05 K. Hatsuda , H. Mine , T. Nakamura , J. Li , R. Wu , S. Katsumoto , J. Haruyama

The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures…

介观与纳米尺度物理 · 物理学 2015-06-16 Jifa Tian , Yongjin Jiang , Isaac Childres , Helin Cao , Jiangping Hu , Yong P. Chen

The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials,…

介观与纳米尺度物理 · 物理学 2022-02-10 Rafał Wawrzyńczak , Stanislaw Galeski , Jonathan Noky , Yan Sun , Claudia Felser , Johannes Gooth

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…

介观与纳米尺度物理 · 物理学 2019-03-20 Rebeca Ribeiro-Palau , Shaowen Chen , Yihang Zeng , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

Strong Goos-H\"anchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. Based on the full quantum description of the temperature-dependent surface conductivity of graphene present in the…

介观与纳米尺度物理 · 物理学 2023-03-22 D. Jahani , O. Akhavan , A. Alidoust Ghatar

We discuss the quantum Hall effect on a single-layer graphene in the framework of noncommutative (NC) phase space. We find it induces a shift in the Hall resistivity. Furthermore, comparison with experimental data reveals an upper bound on…

高能物理 - 理论 · 物理学 2018-01-11 Willien O. Santos , Guilherme M. A. Almeida , Andre M. C. Souza

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…

The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K…

介观与纳米尺度物理 · 物理学 2009-12-08 Xiaosong Wu , Yike Hu , Ming Ruan , Nerasoa K Madiomanana , John Hankinson , Mike Sprinkle , Claire Berger , Walt A. de Heer

We study nonlinear optical response of graphene in the quantum Hall regime to an intense laser pulse. In particular, we consider harmonic generation process. We demonstrate that the generalized magneto-optical conductivity of graphene on…

介观与纳米尺度物理 · 物理学 2016-11-01 H. K. Avetissian , G. F. Mkrtchian

The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated…

介观与纳米尺度物理 · 物理学 2015-05-27 Wang-Kong Tse , Zhenhua Qiao , Yugui Yao , A. H. MacDonald , Qian Niu

Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…

介观与纳米尺度物理 · 物理学 2010-03-09 D. A. Abanin , I. Skachko , X. Du , E. Y. Andrei , L. S. Levitov

In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero…

介观与纳米尺度物理 · 物理学 2024-05-21 Alexey A. Kaverzin , Shunsuke Daimon , Takashi Kikkawa , Tomi Ohtsuki , Eiji Saitoh

We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…

介观与纳米尺度物理 · 物理学 2009-11-13 Masaaki Nakamura , Lila Hirasawa , Ken-Ichiro Imura

Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…

The quantum anomalous Hall (QAH) effect, first proposed in the Haldane model, is a paradigmatic example of the application of band topology in condensed matter physics. The recent experimental discoveries of high Chern number QAH effect in…

介观与纳米尺度物理 · 物理学 2025-03-12 Zhaochen Liu , Jing Wang

Multiple-series and multiple-parallel connections of quantum Hall elementary devices allow the realization of multiple or fractional values of the quantized Hall resistance, rejecting the effect of contact and wiring resistances. We…

仪器与探测器 · 物理学 2013-10-22 Luca Callegaro , Massimo Ortolano