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Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to…

Two-dimensional excitons formed in quantum materials such as monolayer transition-metal dichalcogenides and their strong light-matter interaction have attracted unrivalled attention by the research community due to their extraordinarily…

介观与纳米尺度物理 · 物理学 2018-12-31 Lorenz Maximilian Schneider , Shanece Esdaille , Daniel Rhodes , Katayun Barmak , James Hone , Arash Rahimi-Iman

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface…

Nowadays, modern electron microscopes deliver images at atomic scale. The precise atomic structure encodes information about material properties. Thus, an important ingredient in the image analysis is to locate the centers of the atoms…

计算机视觉与模式识别 · 计算机科学 2017-09-13 Benjamin Berkels , Benedikt Wirth

A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including…

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

介观与纳米尺度物理 · 物理学 2015-05-13 I. Kuljanishvili , C. Kayis , J. F. Harrison , C. Piermarocchi , T. A. Kaplan , S. H. Tessmer , L. N. Pfeiffer , K. W. West

The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused…

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal…

Although in-situ transmission electron microscopy (TEM) of nanomaterials has been gaining importance in recent years, difficulties in sample preparation have limited the number of studies on electrical properties. Here, a support-based…

介观与纳米尺度物理 · 物理学 2024-03-14 Simon Hettler , Mohammad Furqan , Raul Arenal

Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic…

Here, we use atomic resolution scanning transmission electron microscopy (STEM) and first principles calculations to study the atomic and electronic structure of strongly charged domain walls in $\alpha$-In$_2$Se$_3$. STEM imaging and…

The following article presents a multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using a state-of-the-art CMOS image sensor. With an intricate…

Layer number-dependent band structures and symmetry are vital for the electrical and optical characteristics of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Harvesting 2D TMDCs with tunable thickness and properties can be…

The dielectric constant or relative permittivity of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and…

介观与纳米尺度物理 · 物理学 2015-11-24 Di Wu , Alexander J. Pak , Yingnan Liu , Yu Zhou , Xiaoyu Wu , Yihan Zhu , Min Lin , Yu Han , Yuan Ren , Hailin Peng , Yu-Hao Tsai , Gyeong S. Hwang , Keji Lai

We present a new analysis method for atomic resolution four-dimensional scanning transmission electron microscopy (4D-STEM, in which a diffraction pattern is collected at each point of a raster scan of a focused electron beam across the…

仪器与探测器 · 物理学 2025-08-11 Yining Xie , Eoin Moynihan , Marin Alexe , Louis Piper , Ana Sanchez , Richard Beanland

Many recent advances in our understanding of two-dimensional (2D) electron systems stem from van der Waals (vdW) heterostructures. The assembly process relies on the weak bonding across interfaces between layered vdW compounds, making it…

Electron doping is an excellent tuning knob to explore different phases of matter in two-dimensional (2D) materials. For example, tuning the Fermi level at a van Hove singularity in twisted bilayer graphene can enhance electron-electron…

介观与纳米尺度物理 · 物理学 2024-05-24 Aitor Garcia-Ruiz , Ming-Hao Liu

Two-dimensional (2D) materials have emerged as promising candidates for next-generation integrated single-photon emitters (SPEs). However, significant variability in the emission energies of 2D SPEs presents a major challenge in producing…

介观与纳米尺度物理 · 物理学 2025-03-04 Yi Yu , Junyu Ge , Manlin Luo , In Cheol Seo , Youngmin Kim , John J. H. Eng , Kunze Lu , Tian-Ran Wei , Seok Woo Lee , Weibo Gao , Hong Li , Donguk Nam

Janus MoSSe monolayers were recently synthesised by replacing S by Se on one side of MoS$_2$ (or vice versa for MoSe$_2$). Due to the different electronegativity of S and Se these structures carry a finite out-of-plane dipole moment. As we…

材料科学 · 物理学 2018-10-02 Anders C. Riis-Jensen , Mohnish Pandey , Kristian S. Thygesen