相关论文: Controlled rotation of electrically injected spins…

Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…

Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…

The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the…

The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…

Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…

The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…

We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined…

A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…

The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this…