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Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel…

SmB6 exhibits intermediate valence in the ground state and unusual behaviour at low temperatures. The resistivity and the Hall effect cannot be explained either by conventional sf-hybridization or by hopping transport in an impurity band.…

强关联电子 · 物理学 2016-08-31 S. Curnoe , K. A. Kikoin

The outstanding properties of high-purity germanium (HPGe) detectors, such as excellent energy resolution, high energy sensitivity, and a low background-to-signal ratio, make them essential and ideal candidates for detecting particle…

材料科学 · 物理学 2025-07-24 Sandip Aryal , Enrique R. Batista , Gaoxue Wang

In this review article we present a survey of unconventional superconductors and their coexistence behaviour with magnetism. We focus on Ce- and U-based heavy fermion superconductors, in addition we discuss the rare earth borocarbide and…

强关联电子 · 物理学 2009-09-29 Peter Thalmeier , Gertrud Zwicknagl

The negative thermal expansion (NTE) effect has been found generally combined with structural phase transitions. However, the charge and orbital freedoms of the NTE has not been well studied. This study employs angle-resolved photoemission…

材料科学 · 物理学 2025-07-30 Peng Li , Xiaohui Yang , Wenhua Song , Zhefeng Lou , Tongrui Li , Zhengtai Liu , Zhu'an Xu , Zhuoyu Chen , Xiao Lin , Yang Liu

Low-temperature transport through molecules with effectively negative charging energy U exhibits a charge-Kondo effect. We explore this regime analytically by establishing an exact mapping between the negative-U and the positive-U Anderson…

介观与纳米尺度物理 · 物理学 2009-06-02 Jens Koch , Eran Sela , Yuval Oreg , Felix von Oppen

Strong nonradiative recombination has been observed in quasi-one-dimensional antimony selenide, which runs counter to the simple intuition that claims high defect tolerance exists in semiconductors with antibonding state in the valence band…

材料科学 · 物理学 2023-12-05 Menglin Huang , Shanshan Wang , Shiyou Chen

Neutron and x-ray powder and single crystal synchrotron diffraction of CsyFe2-xSe2 show the presence of superstructure reflections with propagation vector k=[2/5, 1/5, 1] with respect to the average crystal structure I4/mmm (a = 4, c =…

Halide perovskite optoelectronic devices suffer from chemical degradation and current-voltage hysteresis induced by migration of highly mobile charged defects. Atomic scale molecular dynamics simulations can capture the motion of these…

材料科学 · 物理学 2025-05-20 Viren Tyagi , Mike Pols , Geert Brocks , Shuxia Tao

The quantum transport properties of the ultrathin silver nanowires are investigated. For a perfect crystalline nanowire with four atoms per unit cell, three conduction channels are found, corresponding to three $s$ bands crossing the Fermi…

材料科学 · 物理学 2009-11-07 Jijun Zhao , Buia Calin , Jie Han , Jian Ping Lu

Intermediate-valence behavior is sometimes observed in lanthanide-based materials containing Ce, Yb, Sm or Eu. However, the number of actinide-based systems that exhibit this type of behavior is rather limited. In this work, we present the…

This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…

介观与纳米尺度物理 · 物理学 2025-09-15 Aarti Lakhara , Lars Thole , Rolf J. Haug , P. A. Bhobe

We report on density-functional-based tight-binding (DFTB) simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect…

材料科学 · 物理学 2007-05-23 S. I. Simdyankin , T. A. Niehaus , G. Natarajan , Th. Frauenheim , S. R. Elliott

We study the evolution of conductance regimes in carbon nanotubes with doubly degenerate orbitals (``shells'') by controlling the contact transparency within the same sample. For sufficiently open contacts, Kondo behavior is observed for 1,…

介观与纳米尺度物理 · 物理学 2009-11-11 A. Makarovski , J. Liu , G. Finkelstein

We present a comprehensive first-principles investigation of defects in 4$H_b$-TaS$_2$. In this layered transition metal dichalcogenide, charge transfer between alternating Mott-insulating 1T and metallic 1H layers gives rise to exotic…

材料科学 · 物理学 2026-03-26 Siavash Karbasizadeh , Wooin Yang , Wonhee Ko , Haidong Zhou , An-Ping Li , Tom Berlijn , Sai Mu

Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major…

Metastable cubic tin(II) sulfide ($\pi$-SnS) is an earth-abundant semiconductor whose three-dimensionally bonded chiral lattice may overcome the short minority-carrier lifetime of orthorhombic SnS while maintaining a near-ideal bandgap for…

Finding of unconventional superconductivity (USC) in FeSe in an electronic "normal" state with broken $C_{4v}$ rotational symmetry testifies to the diversity of pairing states in Fe-based superconductors. Moreover, such USC emerges as a…

超导电性 · 物理学 2018-05-25 Mukul S. Laad , Byron Freelon , Luis Craco

We present the nonlinear susceptibility as a direct test of the quadrupolar Kondo scenario for heavy fermion behavior, and apply it to the case of cubic crystal-field symmetry. Within a single-ion model we compute the nonlinear…

凝聚态物理 · 物理学 2009-10-22 A. P. Ramirez , P. Chandra , P. Coleman , Z. Fisk , J. L. Smith , H. R. Ott

Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…

材料科学 · 物理学 2026-05-27 Yujia Tian , Devesh R. Kripalani , Ming Xue , Kun Zhou