相关论文: Non-uniform Superlattice Magnetic Tunnel Junctions

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2…

We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…

We consider Anderson transitions in two-dimensional spinful electron gases subject to random scalar potentials with time-reversal-symmetric spin-mixing tunneling (SMT) and spin-preserving tunneling (SPT) at potential saddle points (PSPs). A…

Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…

We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity…

Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a…

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of…

We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs) on the basis of first-principles calculations of the electronic structures and the ballistic conductance. The calculated…

Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present…

Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation,…

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…

The emergence of altermagnets has driven groundbreaking advances in spintronics. Notably, d-wave altermagnets support non-relativistic spin transport, efficient charge-to-spin conversion, and T-odd spin currents. In addition, their…

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…

Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…