相关论文: Overbias Light Emission From Memristive Nanojuncti…
Evanescent light can be localized at the nanoscale by resonant absorption in a plasmonic nanoparticle or taper or by transmission through a nanohole. However, a conventional lens cannot focus free-space light beyond half of the wavelength…
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…
Metal nanostructures act as powerful optical antennas[1, 2] because collective modes of the electron fluid in the metal are excited when light strikes the surface of the nanostructure. These excitations, known as plasmons, can have…
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…
Cryogenic opto-electronic interconnects are gaining increasing interest as a means to control and read out cryogenic electronic components. The challenge is to achieve sufficient signal integrity with low heat load processing. In this…
The interaction of free electrons with electromagnetic excitation is the fundamental mechanism responsible for ultra-strong confinement of light that, in turn, enables biosensing, near-field microscopy, optical cloaking, sub-wavelength…
Negative refraction, which reverses many fundamental aspects of classical optics, can be obtained in systems with negative magnetic permeability and negative dielectric permittivity. This Letter documents an experimental realization of…
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
Nanomechanical photonic metamaterials provide a wealth of active switching, nonlinear and enhanced light-matter interaction functionalities by coupling optically and mechanically resonant subsystems. Thermal (Brownian) motion of the…
It is shown that a photoelectron, on being emitted from a conducting solid, suffers a substantial energy change due to ohmic losses. Almost all of this energy loss takes place after the electron leaves the solid. These losses may be…
A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory…
We propose an optical approach to monitor superconductors in conjunction with a normal metal layer. Effectively such a hybrid system represents a resonator, where electrons are strongly coupled with light. We show that the interaction of…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
The ability to tune the wavelength of light emission on a silicon chip is important for scalable photonic networks, distributed photonic sensor networks and next generation computer architectures. Here we demonstrate light emission in a…
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…
Transition metal monopnictides represent a new class of topological semimetals with low-energy excitations, namely, Weyl fermions. We report optical properties across a wide spectral energy range for TaAs, TaP, NbAs and NbP, calculated…
Hysteresis in the current-voltage characteristic in a superconducting nanowire reflects an underlying bistability. As the current is ramped up repeatedly, the state switches from a superconductive to a resistive one, doing so at random…
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to…