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相关论文: General Theory for Bilayer Stacking Ferroelectrici…

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Van der Waals "sliding" ferroelectric bilayers, whose electric polarization is locked to the interlayer alignment, show promise for future non-volatile memory and other nanoelectronic devices. These applications require a fuller…

统计力学 · 物理学 2025-09-19 Benjamin Remez , Moshe Goldstein

In this article, we propose a new concept of bilayer stacking A-type altermagnet (BSAA), in which two identical ferromagnetic monolayers are stacked with antiferromagnetic coupling to form a two-dimensional A-type altermagnet. By solving…

材料科学 · 物理学 2024-11-21 Sike Zeng , Yu-Jun Zhao

Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply…

Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane…

材料科学 · 物理学 2021-12-13 Junlei Zhao , Xinyu Wang , Haohao Chen , Zhaofu Zhang , Mengyuan Hua

Sliding ferroelectricity was originally proposed to elucidate the out-of-plane polarization generated by a specific stacking arrangement of non-polar van der Waals layers. However, the concept of sliding ferroelectricity can be generalized…

材料科学 · 物理学 2024-08-09 Ning Ding , Haoshen Ye , Shuai Dong

Layers of perovskites, found in 3D materials, 2D heterostructures, and nanotubes, often distort from high symmetry to facilitate dipole polarisation that is exploitable in many applications. Using density-functional theory calculations,…

材料科学 · 物理学 2025-11-14 Shaowen Xu , Jeffrey R. Reimers , Fanhao Jia , Wei Ren

Two-dimensional materials with ferroelectric properties break the size effect of conventional ferroelectric materials and unlock unprecedented potentials of ferroelectric-related application at small length scales. In this work, using…

材料科学 · 物理学 2022-03-25 Bo Xu , Junkai Deng , Xiangdong Ding , Jun Sun , Jefferson Zhe Liu

The ground-state structure of monolayers and nanoplatelets of SnS with a thickness from two to five monolayers is calculated from first principles. It is shown that nanoobjects with only odd number of monolayers are ferroelectric. The…

材料科学 · 物理学 2018-10-30 Alexander I. Lebedev

Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of…

材料科学 · 物理学 2022-10-19 Nina C. Georgoulea , Stephen R. Power , Nuala M. Caffrey

The intertwined ferroelectricity and photovoltaics in two-dimensional (2D) materials will enable the favorable improvement and control of photovoltaic preformances. In this paper, we take 2D 3R bilayer BX (X=P, As, Sb) as model systems to…

材料科学 · 物理学 2021-04-08 Qiang Wang , Yan Liang , Hui Yao , Jianwei Li , Tianwei Liu , Bin Wang

Ferroelectricity, a hallmark of spontaneous inversion-symmetry breaking, has been a central concept in condensed matter physics and functional materials research, yet recent discoveries are revealing that switchable polarization can emerge…

材料科学 · 物理学 2026-05-11 Yudi Yang , Changming Ke , Shi Liu

According to the recent studies on sliding/moire ferroelectricity, most 2D van der Waals nonferroelectric monolayers can become ferroelectric via multilayer stacking. In this paper we propose that similar strategy can be used to induce…

材料科学 · 物理学 2025-07-24 Yuxuan Sheng , Junwei Liu , Jia Zhang , Menghao Wu

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…

材料科学 · 物理学 2021-02-16 Yan Liang , Ning Mao , Ying Dai , Liangzhi Kou , Baibiao Huang , Yandong Ma

When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B-N bonds. The ferroelectric switching from AB to BA (or BA to AB) can…

Recent studies have reported emergent ferroelectric behavior in twisted or moir\'e-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer…

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not…

介观与纳米尺度物理 · 物理学 2022-02-04 Xirui Wang , Kenji Yasuda , Yang Zhang , Song Liu , Kenji Watanabe , Takashi Taniguchi , James Hone , Liang Fu , Pablo Jarillo-Herrero

Electric polarization typically originates from non-centrosymmetric charge distributions in compounds. In elemental crystalline materials, chemical bonds between atoms of the same element favor symmetrically distributed electron charges and…

材料科学 · 物理学 2025-01-16 Xuefei Wang , Yanhan Ren , Shi Qiu , Fan Zhang , Xueao Li , Junfeng Gao , Weiwei Gao , Jijun Zhao

Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…

材料科学 · 物理学 2024-08-01 Qingrong Liang , Guozhong Zheng , Liu Yang , Shoujun Zheng

A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…

Two-dimensional (2D) sliding ferroelectric (FE) metals with ferrimagnetism represent a previously unexplored class of spintronic materials, featuring out-of-plane FE polarization, metallic conductivity, and a finite net magnetization, which…

材料科学 · 物理学 2025-11-17 Zhenzhou Guo , Shifeng Qian , Xiaodong Zhou , Wenhong Wang , Zhenxiang Cheng , Xiaotian Wang