相关论文: Light-induced giant and persistent changes in the …
From lithium-ion batteries to high-temperature superconductors, oxide materials have been widely used in electronic devices. However, demands of future technologies require materials beyond oxides, as anion chemistries distinct from oxygen…
Magnetic field induced ferroelectric hysteresis loop observed in Bi0.75Sr0.25FeO3-delta is of prime importance. The coexistence of antiferromagnetism and weak ferromagnetism is responsible for the original magnetoelastic and…
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit…
The spin-driven component of electric polarization in a single crystal of multiferroic BiFeO$_{3}$ was experimentally investigated in pulsed high magnetic fields up to 41 T. Sequential measurements of electric polarization for various…
Domain switching is the cornerstone of ferroelectric materials. Most associated functionalities can be tuned via domain switching, including but not limited to piezoelectricity, thermal conductivity, domain wall conductivity and topological…
In this work, we report the growth and functional characterizations of multiferroic TbMnO3 thin films grown on Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. By performing detailed magnetic and ferroelectric properties…
We demonstrate how the antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. We irradiate our samples with laser light and identify an optically induced creation of antiferromagnetic domains by…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
Magnetic topological insulator is a fertile platform to study the interplay between magnetism and topology. The unique electronic band structure can induce exotic transport and optical properties. However, a comprehensive optical study in…
By performing first-principles calculations, we systematically explore the effect of epitaxial strain on the structure and properties of multiferroic TbMnO3. We show that, although the unstrained bulk TbMnO3 displays a non-collinear…
The recently proposed dynamical multiferroic effect describes the generation of magnetization from temporally varying electric polarization. Here, we show that the effect can lead to a magnetic field at moving ferroelectric domain walls,…
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as…
Pyrrhotite, Fe$_7$S$_8$, provides an example of exceptionally strong magnetoelastic coupling through pinning of ferromagnetic domains by ferroelastic twins. Using direct imaging of both magnetic and ferroelastic domains by magnetic force…
We consider a multiferroic chain with a linear magnetoelectric coupling induced by the electrostatic screening at the ferroelectric/ferromagnet interface. We study theoretically the dynamic ferroelectric and magnetic response to external…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
We investigate magnetoelectric coupling and low-energy magnetic excitations in multiferroic $\alpha$-Cu$_2$V$_2$O$_7$ by detailed thermal expansion, magnetostriction, specific heat and magnetization measurements in magnetic fields up to…
We study the complex ferroelastic/ferroelectric domain structure in the prototypical ferroelectric PbTiO3 epitaxially strained on (110)o-oriented DyScO3 substrates, using a combination of atomic force microscopy, laboratory and synchrotron…
In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall…
We present a unique example of giant magnetoelectric effect in a conventional multiferroic HoMnO3, where polarization is very large (~56 mC/m2) and the ferroelectric transition temperature is higher than the magnetic ordering temperature by…
The photovoltaic effect in the BiFeO3/TiO2 heterostructures can be tuned by epitaxial strain and an electric field in the visible-light region which is manifested by the enhancement of absorption activity in the heterojunction under tensile…