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相关论文: Simulation of the 4H-SiC Low Gain Avalanche Diode

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Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…

Particle IDentification (PID) is a central requirement of the experiments at the future EIC. Hadron PID at high momenta by RICH techniques requires the use of low density gaseous radiators, where the challenge is the limited length of the…

The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp…

We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The…

Prototype of gamma ray detector based on Micro Pixel Avalanche Photodiodes (MAPD) with high pixel density 15000 pixel/$mm^2$, optically coupled to Lutetium Fine Silicate (LFS) scintillator has been developed. The detection performance…

Modified divacancies in the 4H polytype of silicon carbide (SiC) exhibit enhanced charge stability and spin addressability at room temperature, making them attractive for quantum applications. However, their low formation yield and lack of…

In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through…

仪器与探测器 · 物理学 2015-03-14 M. Stipcevic , H. Skenderovic , D. Gracin

Ultraviolet single-photon detector (UVSPD) provides a key tool for the applications requiring ultraweak light detection in the wavelength band. Here, we report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with…

仪器与探测器 · 物理学 2023-03-14 Chao Yu , Tianyi Li , Xian-Song Zhao , Hai Lu , Rong Zhang , Feihu Xu , Jun Zhang , Jian-Wei Pan

GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…

Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…

材料科学 · 物理学 2017-12-15 Xin Qian , Puqing Jiang , Ronggui Yang

We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog front end…

Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…

光学 · 物理学 2020-12-15 Satadal Dutta , Peter G. Steeneken , Gerard J. Verbiest

Dark Matter and Double Beta Decay experiments require extremely low radioactivity within the detector materials. For this purpose, the University of California, Los Angeles and Hamamatsu Photonics have developed the QUartz Photon…

The Compact Linear Collider (CLIC) is a concept for a future $e^{+}e^{-}$ linear collider with a center-of-mass energy of up to 3 TeV. The design of a CLIC experiment is driven by the requirements related to the physics goals, as well as by…

仪器与探测器 · 物理学 2014-02-13 Christian Grefe

The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…

Silicon single-photon detectors (Si SPDs) play a crucial role in detecting single photons in the visible spectrum. For various applications, photon detection efficiency (PDE) is the most critical characteristic for effectively collecting…

A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…

仪器与探测器 · 物理学 2026-05-14 Jingxuan He , Congcong Wang , Yi Zhan , Zhenyu Jiang , Xiyuan Zhang , Xin Shi

Combining gaseous detectors with a high-granularity pixelated charge readout enables experimental applications which otherwise could not be achieved. This includes high-resolution tracking of low-energetic particles, requiring ultra-low…

Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

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