相关论文: Field-free spin-orbit torque switching enabled by …
Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit…
Field-free switching of perpendicularly magnetized ferromagnetic layer by spin orbit torque (SOT) from the spin Hall effect (SHE) is of great interest in the applications of magnetic memory devices. In this paper, we investigate the…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which…
Recently, it was demonstrated that field-free switching could be achieved by combining spin-orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI). However, this mechanism only occurs under certain conditions which have not been…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…
We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are…
The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin…
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
Interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions and other 2D antisymmetric spin textures confined within a single…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to…
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…
Electrical switching of magnetization is central to spintronics. Despite the enormous efforts on the spin torques and the Dzyaloshinskii-Moriya interaction (DMI) effects, some fundamental physics for electrical switching of magnetization is…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…