相关论文: Field-free spin orbit torque switching of syntheti…
We report the thickness dependence of Dzyaloshinskii-Moriya interaction (DMI) and spin-orbit torques (SOTs) in Pt\Co(t)\AlOx, studied by current-induced domain wall (DW) motion and second-harmonic experiments. From the DW motion study, a…
We study the spin-orbit torques (SOTs) in Co/Cu/Co magnetic trilayers based on first-principles density-functional theory calculations in the case where the applied electric field lies in-plane, i.e., parallel to the interfaces. We assume…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
The ability to engineer the interactions in assemblies of nanoscale magnets is central to the development of artificial spin systems and spintronic technologies. Following the emergence of the Dzyaloshinskii-Moriya interaction (DMI) in thin…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
We propose a field-free switching mechanism that utilizes two spatially orthogonal spin-orbit torque (SOT) currents. Initially applied simultaneously, one of the currents is subsequently switched off. The superposition of these two currents…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…
The magnetic interfacial Dzyaloshinskii-Moriya interaction (DMI) in multi-layered thin films can lead to exotic chiral spin states, of paramount importance for future spintronic technologies. Interfacial DMI is normally manifested as an…
Field-free switching of perpendicular magnetization has been observed in an epitaxial L1$_1$-ordered CoPt/CuPt bilayer and attributed to spin-orbit torque (SOT) arising from the crystallographic $3m$ point group of the interface. Using a…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low damping-like SOT efficiency per…
In recent years antiferromagnets (AFMs) have become very promising for nanoscale spintronic applications due to their unique properties such as THz dynamics and absence of stray fields. Manipulating antiferromagnetic textures is currently,…
Synthetic antiferromagnet (SAF) nanostructures with interfacial Dzyaloshinskii-Moriya interaction can host topologically distinct spin textures such as skyrmions and thus are regarded as promising candidates for both spintronics and…
Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy…
Electrical switching of magnetization is central to spintronics. Despite the enormous efforts on the spin torques and the Dzyaloshinskii-Moriya interaction (DMI) effects, some fundamental physics for electrical switching of magnetization is…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…