中文
相关论文

相关论文: How much gallium do we need for a p-type Cu(In,Ga)…

200 篇论文

In cuprate superconductors, the doping of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the doping level $p$. In most materials, $p$…

The cuprate superconductors display several characteristic temperatures which decrease as the material composition is doped, tracing lines across the temperature-doping phase diagram. Foremost among these is the pseudogap transition. At a…

无序系统与神经网络 · 物理学 2019-06-18 Vincent Sacksteder

The p-type semiconductor Cu3PSe4 has recently been established to have a direct bandgap of 1.4 eV and an optical absorption spectrum similar to GaAs [Applied Physics Letters, 99, 181903 (2011)], suggesting a possible application as a solar…

材料科学 · 物理学 2015-06-11 D. H. Foster , F. L. Barras , J. M. Vielma , G. Schneider

Electronic and transport properties of CuGaTe$_2$, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within…

材料科学 · 物理学 2014-01-08 Vijay Kumar Gudelli , V. Kanchana , G. Vaitheeswaran , A. Svane , N. E. Christensen

By substituting Fe with the 5d-transition metal Pt in BaFe2As2, we have successfully synthesized the superconductors BaFe2-xPtxAs2. The systematic evolution of the lattice constants indicates that the Fe ions were successfully replaced by…

超导电性 · 物理学 2015-05-18 Xiyu Zhu , Fei Han , Gang Mu , Jun Tang , Jing Ju , Katsumi Tanigaki , Hai-Hu Wen

We investigate the doping-dependence of the Seebeck coefficient, as calculated from the Kelvin formula, for the Fermi Hubbard model using determinantal quantum Monte Carlo simulations. Our key findings are: (1) Besides the expected hole to…

强关联电子 · 物理学 2025-03-31 Sayantan Roy , Abhisek Samanta , Nandini Trivedi

Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance…

材料科学 · 物理学 2022-12-22 Michael Seifert , Miguel A. L. Marques , Silvana Botti

We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant…

超导电性 · 物理学 2009-11-10 A. V. Pronin , A. Pimenov , A. Loidl , A. Tsukada , M. Naito

The electronic and transport properties of CuInTe2 chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with…

材料科学 · 物理学 2016-01-06 J. Wei , H. J. Liu , L. Cheng , J. Zhang , J. H. Liang , P. H. Jiang , D. D. Fan , J. Shi

We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a…

We study the hydrogen effect on the electronic, magnetic and optical properties of Cu$_2$O in presence of different dopants (Na, Li and Ti). The electronic properties calculations show that hydrogen changes the conductivity of Cu$_2$O from…

材料科学 · 物理学 2019-06-28 A. Larabi , A. Mahmoudi , M. Mebarki , M. Dergal

An eutectic AlCl$_3$/KCl molten salt method in a horizontal configuration was employed to grow millimeter-sized and composition homogeneous CuFeSe$_2$ single crystals due to the continuous growth process in a temperature gradient induced…

Electrical resistivity measurements on a single crystal of the heavy-fermion superconductor CeCoIn_5 at pressures to 4.2 GPa reveal a strong crossover in transport properties near P^* \approx 1.6 GPa, where T_c is a maximum. The…

强关联电子 · 物理学 2009-11-07 V. A. Sidorov , M. Nicklas , P. G. Pagliuso , J. L. Sarrao , Y. Bang , A. V. Balatsky , J. D. Thompson

We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of…

超导电性 · 物理学 2013-01-11 L. J. Li , W. J. Lu , X. D. Zhu , L. S. Ling , Z. Qu , Y. P. Sun

Superconductivity in cuprates peaks in the doping regime between a metal at high p and an insulator at low p. Understanding how the material evolves from metal to insulator is a fundamental and open question. Early studies in high magnetic…

Thus far, there is no cuprate system where both n-type and p-type charge carriers can be doped without changing the crystallographic structure. For studying the electron-hole symmetry in an identical structure, we try to dope n-type…

超导电性 · 物理学 2007-05-23 Kouji Segawa , Yoichi Ando

Heat transport in the cuprate superconductors YBa$_2$Cu$_3$O$_{y}$ and La$_{2-x}$Sr$_x$CuO$_4$ was measured at low temperatures as a function of doping. A residual linear term kappa_{0}/T is observed throughout the superconducting region…

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…

材料科学 · 物理学 2015-05-27 B. Zhang , Y. Yao , R. Patterson , S. Shrestha , M. A. Green , G. Conibeer

2H-NbSe2 is the prototype and most frequently studied of the well-known transition metal dichalcogenide (TMDC) superconductors. Widely acknowledged to be a conventional superconductor, its transition temperature to the superconducting state…

超导电性 · 物理学 2017-03-28 Huixia Luo , Judyta Strychalska-Nowak , Jun Li , Jing Tao , Tomasz Klimczuk , Robert J. Cava

A series of high quality NaFe$_{1-x}$Cu$_x$As single crystals has been grown by a self-flux technique, which were systematically characterized via structural, transport, thermodynamic, and high pressure measurements. Both the structural and…

超导电性 · 物理学 2013-09-30 A. F. Wang , J. J. Lin , P. Cheng , G. J. Ye , F. Chen , J. Q. Ma , X. F. Lu , B. Lei , X. G. Luo , X. H. Chen