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The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…

介观与纳米尺度物理 · 物理学 2023-06-13 Chen-Yu Hu , Wei-De Chen , Yan-Ting Liu , Chao-Chun Huang , Chi-Feng Pai

It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…

应用物理 · 物理学 2019-07-24 Zhaohao Wang , Zuwei Li , Min Wang , Bi Wu , Daoqian Zhu , Weisheng Zhao

Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…

材料科学 · 物理学 2013-05-30 Luqiao Liu , O. J. Lee , T. J. Gudmundsen , D. C. Ralph , R. A. Buhrman

Electrical control of magnetization is of crucial importance for integrated spintronics devices. Spin-orbit torques (SOT) in heavy-metal/ferromagnetic heterostructures have emerged as promising tool to achieve efficiently current-induced…

材料科学 · 物理学 2021-07-21 Leandro Salemi , Marco Berritta , Peter M. Oppeneer

Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which…

Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…

材料科学 · 物理学 2023-04-26 Xin Lin , Lijun Zhu

Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…

介观与纳米尺度物理 · 物理学 2025-11-20 Youjian Chen , Hamed Vakili , Md Golam Morshed , Avik W. Ghosh

We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…

介观与纳米尺度物理 · 物理学 2024-03-27 Junyu Tang , Ran Cheng

We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian. We find that,…

介观与纳米尺度物理 · 物理学 2018-01-03 A. Kalitsov , S. A. Nikolaev , J. Velev , M. Chshiev , O. Mryasov

Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force.…

介观与纳米尺度物理 · 物理学 2018-08-31 Cong Son Ho , Seng Ghee Tan , Shun-Qing Shen , Mansoor B. A. Jalil

We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics.…

介观与纳米尺度物理 · 物理学 2019-10-02 A. Manchon , J. Zelezný , I. M. Miron , T. Jungwirth , J. Sinova , A. Thiaville , K. Garello , P. Gambardella

An applied electric current through a space-inversion asymmetric magnet induces spin-orbit torques (SOTs) on the magnetic moments, which holds much promise for future memory devices. We discuss general Green's function expressions suitable…

材料科学 · 物理学 2014-11-19 Frank Freimuth , Stefan Blügel , Yuriy Mokrousov

Motivated by recent progress in employing two key classes of two-dimensional materials-topological insulators and transition-metal dichalcogenides (TMDCs)-as spin sources for generating spin-orbit torque (SOT), we investigate…

介观与纳米尺度物理 · 物理学 2025-08-01 Leyla Majidi , Azadeh Faridi , Reza Asgari

While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…

介观与纳米尺度物理 · 物理学 2026-03-13 Fei Ye , Chunzheng Wang , Xue Zhang , Sihai Jiao , Zhongjie Wang , Long Cheng , Zhifeng Zhu , Chunlei Gao , Xiaofang Zhai

Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…

材料科学 · 物理学 2017-10-02 K. Yasuda , A. Tsukazaki , R. Yoshimi , K. Kondou , K. S. Takahashi , Y. Otani , M. Kawasaki , Y. Tokura

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…

Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…

材料科学 · 物理学 2018-04-17 X. F. Zhou , J. Zhang , F. Li , X. Z. Chen , G. Y. Shi , Y. Z. Tan , Y. D. Gu , M. S. Saleem , H. Q. Wu , F. Pan , C. Song

In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…