相关论文: Orbital memory from individual Fe atoms on black p…
A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods,…
Orbital memory is defined by two stable valencies that can be electrically switched and read-out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the…
The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…
We propose a reversible mechanism for switching Heisenberg-type exchange interactions between deposited transition metal adatoms from ferromagnetic to antiferromagnetic. Using first-principles calculations, we show that this mechanism can…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
The hole distribution in a double quantum well (QW) structure consisting of a magnetic and a nonmagnetic semiconductor QW is investigated as a function of temperature, the energy shift between the QWs, and other relevant parameters. When…
We propose a novel representation of crystalline materials named orbital-field matrix (OFM) based on the distribution of valence shell electrons. We demonstrate that this new representation can be highly useful in mining material data. Our…
The orbital angular moment of magnetic atoms adsorbed on surfaces is often quenched as a result of an anisotropic crystal field. Due to spin-orbit coupling, what remains of the orbital moment typically delineates the orientation of the…
We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was…
We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently…
Here we present an experimentally feasible quantum memory for individual polarization photon with long-lived atomic ensembles excitations. Based a process similar to teleportation, the memory is reversible. And the storage information can…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
We reversibly switch the polar environment of an individual magnetic atom with an electric field to control the energy barrier for reversal of magnetization. By applying an electric field in the gap between the tip and sample of a scanning…
Interfacial orbital transport remains far less understood than its bulk counterpart despite its central role in orbitronic experiments. Here, we theoretically investigate the transmission and conversion of orbital angular momentum across a…
Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallization from the amorphous phase, these alloys form a cubic…
Recent experiments demonstrating atomic quantum memory for light [B. Julsgaard et al., Nature 432, 482 (2004)] involve two macroscopic samples of atoms, each with opposite spin polarization. It is shown here that a single atomic cell is…
Based on the analysis of a two-orbital Hubbard model within a mean-field approach, we propose a mechanism for an orbital selective phase transition (OSPT) where coexistence of localized and itinerant electrons can be realized. We show that…
We coincidently measure the molecular frame photoelectron angular distribution and the ion sum-momentum distribution of single and double ionization of CO molecules by using circularly and elliptically polarized femtosecond laser pulses,…
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der…
Among the numerous 2D system that can be prepared via exfoliation, iron phosphorus trisulfide (FePS3) attracts a lot of attention recently due to its broad-range photoresponse, its unusual Ising-type magnetic order and possible applications…