相关论文: Spin anomalous-Hall unidirectional magnetoresistan…
We develop a theory of angle-dependent magnetoresistance (ADMR) in metallic altermagnets coupled to ferromagnetic insulators and establish criteria that distinguish them from conventional compensated magnets with spin-orbit coupling. We…
The in-plane anomalous Hall effect occurs when magnetization lies within the same plane as the electric field and Hall current, and requires magnetic point groups lacking rotational or mirror symmetries. While it is observed in both Weyl…
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at…
Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic…
Orthorhombic CuMnAs has been proposed as an antiferromagnetic semimetal hosting nodal line and Dirac points around the Fermi level. We investigate relations between the topological bands and transport phenomena, i.e. spin Hall effect and…
Spin-orbit torque in heavy metal/ferromagnet heterostructures with broken spatial inversion symmetry provides an efficient mechanism for manipulating magnetization using a charge current. Here, we report the presence of a spin torque in a…
Tunable electronic properties in magnetic materials lead to novel physical phenomena that have the potential to be exploited in the design of new spintronic devices. Here, we report the effect of uniaxial stress on the anomalous Hall effect…
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…
The spin Hall magnetoresistance (SMR) phenomenon includes the fundamental physics of spin current, and originates from spin accumulation at an interface owing to the spin Hall effect. Although bilayers are the simplest structure exhibiting…
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is…
The quantum geometry has significant consequences in determining transport and optical properties in quantum materials. Here, we use a semiclassical formalism coupled with perturbative corrections unifying the nonlinear anomalous Hall…
Voltages generated from inverse spin Hall and anisotropic magneto-resistance effects via spin pumping in ferromagnetic (F)/non-magnetic (N) bilayers are investigated by means of a broadband ferromagnetic resonance approach. Varying the…
The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La(2-2x)Sr(1+2x)Mn2O7 (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients…
The anomalous Hall effect (AHE) is highly sensitive to disorder in the metallic phase. Here we show that statistical correlations between the charge and spin disorder sectors strongly affect both the longitudinal conductivity and the…
In this work, we experimentally investigate spin and orbital torque phenomena using the spin-torque ferromagnetic resonance (ST-FMR) technique in a series of bilayer systems composed of different normal metal (NM) materials. Permalloy (Py)…
We perform Monte Carlo simulations to obtain quantitative results for the anomalous Hall resistance, R_A, observed in colossal magnetoresistance manganites. R_A arises from the interaction between the spin magnetization and topological…
A new mechanism of spin structure-driven anomalous Hall effect (AHE) in tilted ferromagnetic metals is proposed by taking account of the d-orbital degree of freedom. We find that a conduction electron acquires a Berry phase due to the…
Spin pumping in ferromagnets provides a source of pure spin currents. Via the inverse spin Hall effect a spin current is converted into a charge current and a corresponding detectable DC-voltage. The ratio of injected spin current to…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…
The control of unconventional magnetism, which displays ferromagnetism-like properties with compensated magnetization, has drawn intense attention for advancing antiferromagnetic spintronics. Here, through symmetry analysis, we propose a…