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相关论文: NeuroHammer: Inducing Bit-Flips in Memristive Cros…

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Dynamic Random Access Memory (DRAM) is pervasive in computer systems. Cell vulnerabilities caused by unintended phenomena (forced retention failure, latency alteration, rowhammer and rowpress) lead to unintended bit flips in memory. These…

密码学与安全 · 计算机科学 2026-03-20 Zilong Hu , Hongming Fei , Prosanta Gope , Jack Miskelly , Owen Millwood , Biplab Sikdar

In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…

新兴技术 · 计算机科学 2018-09-24 Debjyoti Bhattacharjee , Yaswanth Tavva , Arvind Easwaran , Anupam Chattopadhyay

Memristor-based crossbar arrays represent a promising emerging memory technology to replace conventional memories by offering a high density and enabling computing-in-memory (CIM) paradigms. While analog computing provides the best…

Neuromorphic computing, inspired by the human brain's neural architecture, is revolutionizing artificial intelligence and edge computing with its low-power, adaptive, and event-driven designs. However, these unique characteristics introduce…

密码学与安全 · 计算机科学 2025-05-26 Hemanth Ravipati

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

Memristive crossbar arrays enable in-memory computing by performing parallel analog computations directly within memory, making them well-suited for machine learning, neural networks, and neuromorphic systems. However, despite their…

密码学与安全 · 计算机科学 2025-10-03 Muhammad Faheemur Rahman , Wayne Burleson

We will discuss the RowHammer problem in DRAM, which is a prime (and likely the first) example of how a circuit-level failure mechanism in Dynamic Random Access Memory (DRAM) can cause a practical and widespread system security…

密码学与安全 · 计算机科学 2019-03-28 Onur Mutlu

Neuromorphic architectures built with Non-Volatile Memory (NVM) can significantly improve the energy efficiency of machine learning tasks designed with Spiking Neural Networks (SNNs). A major source of voltage drop in a crossbar of these…

神经与进化计算 · 计算机科学 2020-09-29 Twisha Titirsha , Anup Das

Resistive Random-Access Memory (ReRAM) crossbar arrays are promising candidates for in-situ matrix-vector multiplication (MVM), a frequent operation in Deep Learning algorithms. Despite their advantages, these emerging non-volatile memories…

新兴技术 · 计算机科学 2024-12-05 Benyamin Khezeli , Hamid Reza Zarandi , Elham Cheshmikhani

Rowhammer is a critical vulnerability in dynamic random access memory (DRAM) that continues to pose a significant threat to various systems. However, we find that conventional load-based attacks are becoming highly ineffective on the most…

密码学与安全 · 计算机科学 2025-10-21 Weijie Chen , Shan Tang , Yulin Tang , Xiapu Luo , Yinqian Zhang , Weizhong Qiang

Deep Learning neural networks are pervasive, but traditional computer architectures are reaching the limits of being able to efficiently execute them for the large workloads of today. They are limited by the von Neumann bottleneck: the high…

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attackers leverage RowHammer bitflips in real systems to take over…

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by keeping a DRAM row open…

Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…

神经与进化计算 · 计算机科学 2020-07-07 Shihao Song , Anup Das

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

新兴技术 · 计算机科学 2020-04-28 Nikhil Rangarajan , Satwik Patnaik , Johann Knechtel , Ozgur Sinanoglu , Shaloo Rakheja

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

The RRAM-based neuromorphic computing system has amassed explosive interests for its superior data processing capability and energy efficiency than traditional architectures, and thus being widely used in many data-centric applications. The…

密码学与安全 · 计算机科学 2023-02-21 Hao Lv , Bing Li , Lei Zhang , Cheng Liu , Ying Wang

A fundamental assumption in software security is that memory contents do not change unless there is a legitimate deliberate modification. Classical fault attacks show that this assumption does not hold if the attacker has physical access.…

密码学与安全 · 计算机科学 2018-05-15 Moritz Lipp , Misiker Tadesse Aga , Michael Schwarz , Daniel Gruss , Clémentine Maurice , Lukas Raab , Lukas Lamster

RowHammer is a vulnerability inside DRAM chips where an attacker repeatedly accesses a DRAM row to flip bits in the nearby rows without directly accessing them. Several studies have found that flipping bits in the address part inside a page…

密码学与安全 · 计算机科学 2024-06-21 Keigo Yoshioka , Soramichi Akiyama

Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…

硬件体系结构 · 计算机科学 2018-05-01 HanBin Yoon , Justin Meza , Rachata Ausavarungnirun , Rachael A. Harding , Onur Mutlu