相关论文: Intrinsic RESET speed limit of valence change memo…

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…

Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many…

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…

Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM…

Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…

Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…

Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the…

Reservoir computing is a brain-inspired machine learning framework for processing temporal data by mapping inputs into high-dimensional spaces. Physical reservoir computers (PRCs) leverage native fading memory and nonlinearity in physical…

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…

Large Reasoning Models possess remarkable capabilities for self-correction in general domain; however, they frequently struggle to recover from unsafe reasoning trajectories under adversarial attacks. Existing alignment methods attempt to…

Autonomous indoor mobile robots can navigate reliably to metric coordinates using established frameworks such as ROS 2 Navigation 2, yet they lack the ability to interpret natural language instructions that express intent rather than…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates to implement in-memory computing, which is less…

Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…

In this paper, five virtual inertia control structures are implemented and tested on a variable speed hydropower (VSHP) plant. The results show that all five can deliver fast power reserves to maintain grid stability after disturbances…