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相关论文: Photoelectron Transportation Dynamics in GaAs Phot…

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We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping…

The enhanced photocatalytic performance of doped graphene(GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the…

计算物理 · 物理学 2015-10-29 Chao-Ni He , Wei-Qing Huang , Liang Xu , Yin-Cai Yang , Bing-Xin Zhou , Gui-Fang Huang , P. Peng , Wu-Ming Liu

We perform time- and angle-resolved photoelectron spectroscopy on p-type GaAs(110). We observe an optically excited population in the conduction band, from which the time scales of intraband relaxation and surface photovoltage decay are…

材料科学 · 物理学 2013-12-06 Shuolong Yang , Jonathan A. Sobota , Patrick S. Kirchmann , Zhi-Xun Shen

We present a graphene photodetector coupled to a layer of aggregated organic semiconductor. A graphene phototransistor is covered with a thin film of merocyanine molecules. The aggregation of the molecular layer can be controlled by the…

介观与纳米尺度物理 · 物理学 2025-09-01 Abhinav Raina , Maurizio Sanfilippo , Chang-Ki Moon , Manuel Neubauer , Klaus Meerholz , Malte C. Gather , Klas Lindfors

The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown…

其他凝聚态物理 · 物理学 2009-11-13 T. Berstermann , T. Auer , H. Kurtze , M. Schwab , D. R. Yakovlev , M. Bayer , J. Wiersig , C. Gies , F. Jahnke , D. Reuter , A. D. Wieck

Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping…

I present a theory of electron dynamics in semiconductors with slowly varying composition. I show that the frequency-dependent conductivity, required for the description of transport and optical properties, can be obtained from a knowledge…

凝聚态物理 · 物理学 2016-08-31 Michael R. Geller

Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry or doping. Using…

We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular…

Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…

介观与纳米尺度物理 · 物理学 2025-02-12 Son T. Le , Thuc T. Mai , Maria F. Munoz , Angela R. Hight Walker , Curt A. Richter , Aubrey T. Hanbicki , Adam L. Friedman

Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by…

介观与纳米尺度物理 · 物理学 2024-03-12 Sheng-Nan Zhu , Shun-Cai Zhao , Lin-Jie Chen , Qing Fang

Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…

The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…

材料科学 · 物理学 2007-05-23 A. Ya. Shul'man , N. A. Mordovets , I. N. Kotel'nikov

Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of…

介观与纳米尺度物理 · 物理学 2009-11-13 N. M. R. Peres , J. M. B. Lopes dos Santos , T. Stauber

Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo…

In the present work, a light-controlled device cell is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized by three types of transport behaviors: linear increase,…

化学物理 · 物理学 2015-06-11 X. Q. Wang , C. B. Cai , Y. F. Wang , W. Q. Zhou , Y. M. Lu , Z. Y. Liu

In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…

介观与纳米尺度物理 · 物理学 2015-03-13 F. Cadiz , D. Paget , A. C. H. Rowe , T. Amand , P. Barate , S. Arscott

Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge carrier dynamics in semiconductors are well-described by the…

介观与纳米尺度物理 · 物理学 2021-07-13 William A. Callahan , Dudong Feng , Zhuomin M. Zhang , Eric S. Toberer , Andrew J. Ferguson , Eric J. Tervo

Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and…

We report first-principles calculations of electron-phonon coupling in bilayer graphene and the corresponding contribution to carrier scattering. At the phonon $\Gamma$ point, electrons with energies less than 200 meV are scattered…

介观与纳米尺度物理 · 物理学 2020-07-01 Yijun Ge , Timothy S. Fisher
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