相关论文: Electric-Field-Controlled Antiferromagnetic Spintr…
We discuss the recent progress and the current status of experimental investigations of spin-mediated energy transport in spin-chain and spin-ladder materials with antiferromagnetic coupling. We briefly outline the central results of…
While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger…
Novel materials, which often exhibit surprising or even revolutionary physical properties, are necessary for critical advances in technologies. Simultaneous control of structural and physical properties via a small electrical current is of…
A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
We derive equations of motion for topological solitons in antiferromagnets under the combined action of perturbations such as an external magnetic field and torque-generating electrical current. Aside from conservative forces, such…
Combining strong electron correlations [1-4] and nontrivial electronic topology [5] holds great promise for discovery. So far, this regime has been rarely accessed and systematic studies are much needed to advance the field. Here we…
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we…
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, electrical pulse-induced Neel vector reorientation in AFM insulators, while predicted to occur at much faster timescales than ferromagnetic switching,…
The idea to find a magnet that responds to an electric field as efficiently as to its magnetic counterpart has long intrigued people's minds and recently became a cornerstone for future energy efficient and nano-scalable technologies for…
We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show…
In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…
Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN)…
2D van der Waals (vdW) ferromagnets have emerged as promising materials for spintronic applications due to their unique magnetic properties and tunability. Controlling ferromagnetism via external stimuli is critical for both fundamental…
Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…