相关论文: Large-Gap Quantum Anomalous Hall Effect in Monolay…

We present systematic first-principles results for the electronic and magnetic properties of two-dimensional transition-metal trihalide monolayers MX3 (M = V, Cr, Mn, Fe, Ni, Pd; X = F, Cl, Br, I), focusing on their potential to host the…

Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic…

It is of great interest to explore intrinsic two-dimensional ferromagnetism and seek better two-dimensional quantum anomalous Hall insulator materials. Here, we show that the FeBr$_3$ monolayer is an intrinsic two-dimensional ferromagnetic…

Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…

Metal halide perovskites exhibit a fairly linear increase of the bandgap with increasing temperature, when crystallized in a tetragonal or cubic phase. In general, both thermal expansion and electron-phonon interaction effects contribute…

We explored the possibility of realizing quantum anomalous Hall effect by placing heavy-element atomic layer on top of monolayer CrI$_{3}$ with a natural cleavage surface and broken time-reversal symmetry. We showed that CrI$_{3}$/X (X =…

Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in…

Motivated by the goal of realizing topological phases in thin films and heterostructures of correlated oxides, we propose here a quantum anomalous Hall insulator (QAHI) in ultrathin films of double perovskites based on mixed 3d-5d or 3d-4d…

Magnetic topological quantum materials are attracting considerable attention owing to their potential technological applications. However, only a small number of these materials have been experimentally realized, thereby giving rise to the…

The quantum anomalous Hall state with a large band gap and a high Chern number is significant for practical applications in spintronics. By performing first-principles calculations, we investigate electronic properties of the fully…

The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…

Using tight-binding models and first-principles calculations, we demonstrate the possibility to achieve a quantum anomalous Hall (QAH) phase on a two-dimensional square lattice, which can be realized in monolayers of double perovskites. We…

We theoretically propose that the monolayer $A$Ti$X$ family (KTiSb, KTiBi, RbTiSb, SrTiSn) are potential candidates for large-gap quantum anomalous Hall insulators with high Chern number $\mathcal{C}=2$. Both of the topology and magnetism…

The planar Hall effect (PHE), wherein a rotating magnetic field in the plane of a sample induces oscillating transverse voltage, has recently garnered attention in a wide range of topological metals and insulators. The observed twofold…

We predict robust Ising ferromagnetism driven by Coulomb interaction in the metallic phase of twisted transition metal dichalcogenides homobilayers for a range of small twist angles. Due to the presence of spin-valley locking and Chern…

The quantum anomalous Hall (QAH) effect is a topologically nontrivial phase, characterized by a non-zero Chern number defined in the bulk and chiral edge states in the boundary. Using first-principles calculations, we demonstrate the…

Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$,…

The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility.…

We study theoretically the zero temperature intrinsic anomalous Hall effect in an experimentally realized 2D spin-orbit coupled Bose gas. For anisotropic atomic interactions and as the spin-orbit coupling strength increases, the system…

We demonstrate a new quantum state of matter---valley-polarized quantum anomalous Hall effect in monolayer silicene. In the presence of extrinsic Rashba spin-orbit coupling and exchange field, monolayer silicene can host a quantum…