相关论文: Gated InGaAs Detector Characterization with Sub-Pi…

Single photon detectors are important for a wide range of applications each with their own specific requirements, which makes necessary the precise characterization of detectors. Here, we present a simple and accurate methodology of…

InGaAs/InP-based semiconductor avalanche photodiode are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has…

We demonstrate an integral gated mode single photon detector at telecom wavelengths. The charge number of an avalanche pulse rather than the peak current is monitored for single-photon detection. The transient spikes in conventional gated…

Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be…

In this paper, we have investigated a self-developed sine wave gated (SWG) single-photon detector (SPD) for 1550 nm wavelength primary for quantum key distribution (QKD) usage. We have investigated different gate parameters` influence on…

We present a free-running single photon detector for telecom wavelengths based on a negative feedback avalanche photodiode (NFAD). A dark count rate as low as 1 cps was obtained at a detection efficiency of 10%, with an afterpulse…

We present and analyze a gated single photon avalanche detector using a sine gating scheme with a simple but effective low-pass filtering technique for fast low-noise single photon detection at telecom wavelength. The detector is…

We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a…

Semiconductor lasers merge coherent light emission with photodetection and, owing to third-order nonlinearities in their active region, function as sensitive room temperature two-photon absorption (TPA) detectors. Here, we leverage these…

Superconducting single photon detectors (SSPD) based on nanopatterned niobium nitride wires offer single photon counting at fast rates, low jitter, and low dark counts, from visible wavelengths well into the infrared. We demonstrate the…

A sine-gated single-photon detector (SPD) intended for use in a quantum key distribution (QKD) system is considered in this paper. An "avalanche delay" effect in the sine-gated SPD is revealed. This effect consists in the appearance of an…

We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single…

Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…

The detection sensitivity (DS) of the commercial single-photon-receiver based on InGaAs gate-mode avalanche photodiode is estimated. Instalment of a digital-blanking-system (DBS) to reduce dark current makes the difference between DS, which…

Single-photon detectors (SPDs) at near infrared wavelengths with high system detection efficiency (> 90%), low dark count rate (< 1 counts per second, cps), low timing jitter (< 100 ps), and short reset time (< 100 ns) would enable landmark…

We report on the new optical gating technique used for the direct photoconductive detection of short pulses of terahertz radiation with the resolution up to 250 femtoseconds. The femtosecond optical laser pulse time delayed with respect to…

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count…

The construction of a single photon source using gated parametric fluorescence is reported with the measurement results of the photon number distribution. A beamlike twin-photon method is used in order to achieve high collection efficiency.…

In this work, we present a capacitively coupled GaAs p +-i-n/substrate photodetector (CC-GaAs PIN/S PD), which also represents a preliminary step toward 3D detection (x, y, time) of high-energy X-ray pulses. Although the final 3D detector…

Afterpulsing noise in InGaAs/InP single photon avalanche photodiodes (APDs) is caused by carrier trapping and can be suppressed successfully through limiting the avalanche charge via sub-nanosecond gating. Detection of faint avalanches…